A New Reverse Base Current (RBC) of the Bipolar Transistor Induced by Impact Ionization

Abstract

We report the observation of base current characteristics of bipolar transistors at a certain collector voltage. The reverse base current (RBC) effect is a newly found phenomenon. The mechanism of the RBC effect can be explained by the impact ionization between the base and the collector. We can successfully analyze the RBC effect. The agreement between simulation and measurement is shown to be very good.