A new resonant-tunnel diode-based multivalued memory circuit using a MESFET depletion load

Yan, Z.X.; Deen, M. Jamal

doi:10.1109/4.148329

Cited by 44 publications

(15 citation statements)

References 10 publications

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“…The development of the band-gap engineering has opened the possibility of using different material systems in order to extend RTD operation frequencies to the THz-region. Oscillations of up to 712 GHz have been reported and several applications of RTDs for multivalued logic have been proposed [1][2][3]. However the RTD currentvoltage characteristics show, as explained below, a special uniaxial stress dependence, mainly in the negative differential resistance region.…”

Section: Introductionmentioning

confidence: 99%

A GaAs pressure sensor with frequency output based on resonant tunneling diodes

Mutamba

Flath

Sigurdardottir

et al. 1999

IEEE Trans. Instrum. Meas.

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Section: Introductionmentioning

confidence: 99%

A GaAs pressure sensor with frequency output based on resonant tunneling diodes

Mutamba

Flath

Sigurdardottir

et al. 1999

IEEE Trans. Instrum. Meas.

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“…The N-state devices driven in the non-deterministic range can be also used for random number generation, but further applications can be devised in multi-valued logic circuits or for the random routing of signals. In addition to true random number generation 2,4,35 , and due to their multi-valued hysteretic behaviour, these devices show great potential for novel applications such as elements for neural networks 36,37 and multi-valued logic systems 21 .…”

Section: Discussionmentioning

confidence: 99%

“…The sudden current drop occurring between the two conduction regimes shows as a narrow resonance in the I-V characteristics. The bistability 19 and fast switching characteristics 20 emerging from the sharp NDR resonance of RTDs makes them promising candidates for applications in multi-valued logic circuits 21 , random-access memories 22 , multi-function logic gates 23 , chaotic signal generation 3,24,25 , single-photon switching 26 , unique device identification 27 and terahertz oscillators 28,29 . Due to their N-shaped NDR characteristics, the RTD's current is a single-valued function of voltage whereas the opposite is not true, as current values between those of the peak (I p ) and the valley (I v ) exhibit multiple voltage levels due to the different aforementioned conduction mechanisms.…”

Section: Introductionmentioning

confidence: 99%

N-state random switching based on quantum tunnelling

Gavito

Urbanos

Roberts

et al. 2017

Nanoengineering: Fabrication, Properties, Optics, and Devices XIV

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In this work, we show how the hysteretic behaviour of resonant tunnelling diodes (RTDs) can be exploited for new functionalities. In particular, the RTDs exhibit a stochastic 2-state switching mechanism that could be useful for random number generation and cryptographic applications. This behaviour can be scaled to N-bit switching, by connecting various RTDs in series. The InGaAs/AlAs RTDs used in our experiments display very sharp negative differential resistance (NDR) peaks at room temperature which show hysteresis cycles that, rather than having a fixed switching threshold, show a probability distribution about a central value. We propose to use this intrinsic uncertainty emerging from the quantum nature of the RTDs as a source of randomness. We show that a combination of two RTDs in series results in devices with three-state outputs and discuss the possibility of scaling to N-state devices by subsequent series connections of RTDs, which we demonstrate for the up to the 4-state case.In this work, we suggest using that the intrinsic uncertainty in the conduction paths of resonant tunnelling diodes can behave as a source of randomness that can be integrated into current electronics to produce on-chip true random number generators. The N-shaped I-V characteristic of RTDs results in a two-level random voltage output when driven with current pulse trains. Electrical characterisation and randomness testing of the devices was conducted in order to determine the validity of the true randomness assumption. Based on the results obtained for the single RTD case, we suggest the possibility of using multi-well devices to generate N-state random switching devices for their use in random number generation or multi-valued logic devices.

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“…This kind of MVL circuit possesses a better noise margin because the load current could be adjusted to a value approximately halfway between the peak and valley currents of the threepeak NDR circuit. However, this MVL circuit requires an extra read/write circuit with a pulse control gate and a sawtooth wave at the input terminal to obtain the multiple states at the output [5]. But the applied voltage could be controlled under a safe and suitable condition.…”

Section: Multiple-valued Logic Designmentioning

confidence: 99%

“…In particular, the multiple-peak NDR circuits provide the convenience to implement the multiplevalued logic (MVL) circuit [3]- [5]. Compared to traditional binary logic, the MVL can transfer more information with fewer interconnects between devices and circuits.…”

Section: Introductionmentioning

confidence: 99%

Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources

Gan

Liang

Chen

2010

IEICE Trans. Inf. & Syst.

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SUMMARYThe paper demonstrates a novel multiple-valued logic (MVL) design using a three-peak negative differential resistance (NDR) circuit, which is made of several Si-based metal-oxide-semiconductor fieldeffect-transistor (MOS) and SiGe-based heterojunction bipolar transistor (HBT) devices. Specifically, this three-peak NDR circuit is biased by two switch-controlled current sources. Compared to the traditional MVL circuit made of resonant tunneling diode (RTD), this multiple-peak MOS-HBT-NDR circuit has two major advantages. One is that the fabrication of this circuit can be fully implemented by the standard BiCMOS process without the need for molecular-beam epitaxy system. Another is that we can obtain more logic states than the RTD-based MVL design. In measuring, we can obtain eight logic states at the output according to a sequent control of two current sources on and off in order.

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A new resonant-tunnel diode-based multivalued memory circuit using a MESFET depletion load

Cited by 44 publications

References 10 publications

A GaAs pressure sensor with frequency output based on resonant tunneling diodes

A GaAs pressure sensor with frequency output based on resonant tunneling diodes

N-state random switching based on quantum tunnelling

Novel Multiple-Valued Logic Design Using BiCMOS-Based Negative Differential Resistance Circuit Biased by Two Current Sources

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