A new plasma source for next generation MEMS deep Si etching: Minimal tilt, improved profile uniformity and higher etch rates

Barnett, Richard; Thomas, Dave; Song, Yiping; Tossell, D. A.; Barrass, Tony; Ansell, Oliver

doi:10.1109/ectc.2010.5490831

Cited by 15 publications

(6 citation statements)

References 1 publication

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“…The SPTS Rapier ™ XE [19] (Figure 2) uses high power radio frequency (RF) generators, adaptable hardware and large volumes of SF6 to support high silicon etch rates (~10µm/min for 300mm wafers) and good selectivity to other materials such as photoresist or oxides, for example 100:1 selectivity to oxide. The dual source combined with dual gas inlets allows a significant degree of process tuning to reduce non-uniformity.…”

Section: Tsv Reveal Processmentioning

confidence: 99%

A Dry Etch Approach To Reduce Roughness and Eliminate Visible Grind Marks in Silicon Wafers Post Back-Grind

Mumford

Hopkins

Guy

2023

IEEE Trans. Semicond. Manufact.

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3D wafer packaging represents a significant component of the total wafer level processing cost. Replacement of the Chemical Mechanical Polishing (CMP) process step with a corresponding dry etch can yield significant time and cost savings. Incorporating equipment already utilized in the 3D integrated wafer packaging process during the subsequent Through Silicon Via (TSV) reveal step, process efficiencies can be achieved, with overall die yields being maintained. Using dry etch technology to treat a 200nm rough back-ground silicon surface, a smooth surface with a peak to valley roughness of less than 6nm is demonstrated. This patented process differs from other dry etch smoothing techniques in that it aims to eliminate any visual grind marks rather than just reducing the surface roughness. The elimination of visible grind marks is critical in later optical inspection where they are falsely identified as defects. The quality of the surface is equivalent to that of a CMP processed wafer and as such, this process has been implemented in manufacturing replacing the CMP step. The novel process described combines a surface modification followed by a roughness reduction in an iterative manner to produce a smooth surface without visible grind marks post processing.

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Section: Tsv Reveal Processmentioning

confidence: 99%

A Dry Etch Approach To Reduce Roughness and Eliminate Visible Grind Marks in Silicon Wafers Post Back-Grind

Mumford

Hopkins

Guy

2023

IEEE Trans. Semicond. Manufact.

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“…5, both tools showed much more favorable and similar bar tilt variations in the central 80-120 mm, but better performance (< ±0.2 degrees over a whole 200 mm wafer) has been presented in the literature elsewhere. 18 Ideally we would want to achieve no more than ±0.2 deg of bar tilt across the central 150 mm of the wafer in order to easily put at least a 3 × 3 array of Arcus gratings in the center of a single wafer (see right of Fig. 5) without being impacted by excessive bar tilt.…”

Section: Grating Bar Tiltmentioning

confidence: 99%

Soft x-ray performance and fabrication of flight-like blazed transmission gratings for the x-ray spectrometer on arcus probe

Heilmann,

Bruccoleri,

Gullikson

et al. 2023

Optics for EUV, X-Ray, and Gamma-Ray Astronomy XI

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In response to Astro2020 recommendations, NASA has issued an announcement of opportunity for an astrophysics probe explorer. Arcus-Probe is a mission concept featuring two co-aligned high-resolution spectrometers, one for the soft x-ray band, and one for the far ultraviolet. This combination of instruments will provide unprecedented performance for the exploration of feedback that shapes the structure and influences the dynamics of our universe across many scales, ranging from galaxy clusters down to individual stars. In the soft x-ray band the x-ray spectrometer features four parallel channels, comprised of arrays of Silicon Pore Optics (SPO) and Critical-Angle Transmission (CAT) gratings. The channels will provide a combined effective area ⪆350 cm2 near O VII (approximately 470 cm2 expected), and resolving power R = λ/Δλ ⪆2500 (approximately 3500 expected) across the approximately 12 − 50 Å wavelength range. Light-weight, high-efficiency, blazed and alignment-insensitive CAT gratings have been shown to meet or exceed Arcus requirements for diffraction efficiency, open area, and effective resolving power. A total of 864 to approximately 32 × 32.5 mm2 CAT grating facets must be fabricated for Arcus, implying efficient volume production. We describe the x-ray testing and performance of the most recent flight-like grating facets, made from 200 mm Silicon-on-Insulator (SOI) wafers using tools compatible with volume production. Newly acquired SOI wafers with 100 nm device layer thickness control are expected to increase fabrication yields, and ongoing post-fabrication thinning of freestanding CAT grating bars promises increases in diffraction efficiency.

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“…This translates into an area of 13 (7 th order), 10 (10 th order), 6 (14 th order) and 5 mm (18 th order) in length along the dispersion direction contributing to the given orders. Recent testing with a more modern DRIE tool [49] has produced CAT grating geometry etches with significantly smaller etch angle variations [50]. Second, the gratings sit in a converging beam.…”

Section: A Known Blaze Angle Variationmentioning

confidence: 99%

Demonstration of resolving power λ/Δλ > 10,000 for a space-based x-ray transmission grating spectrometer

Heilmann

Kolodziejczak

Bruccoleri³

et al. 2019

Appl. Opt.

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We present measurements of the resolving power of a soft x-ray spectrometer consisting of 200 nm-period lightweight, alignment-insensitive critical-angle transmission (CAT) gratings and a lightweight slumpedglass Wolter-I focusing mirror pair. We measure and model contributions from source, mirrors, detector pixel size, and grating period variation to the natural line width spectrum of the Al and Mg K α 1 α 2 doublets. Measuring up to 18 th diffraction order at characteristic Al-K wavelengths we consistently obtain small broadening due to gratings corresponding to a minimum effective grating resolving power R g > 10, 000 with 90% confidence. Upper limits are often compatible with R g = ∞. Independent fitting of different diffraction orders, as well as ensemble fitting of multiple orders at multiple wavelengths, gives compatible results. Our data leads to uncertainties for the Al-K α doublet line width and line separation parameters 2-3 times smaller than values found in the literature. Data from three different gratings are mutually compatible. This demonstrates that CAT gratings perform in excess of the requirements for the Arcus Explorer mission and are suitable for next-generation space-based x-ray spectrometer designs with resolving power 5-10 times higher than the transmission grating spectrometer on the Chandra X-ray Observatory.

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A new plasma source for next generation MEMS deep Si etching: Minimal tilt, improved profile uniformity and higher etch rates

Cited by 15 publications

References 1 publication

A Dry Etch Approach To Reduce Roughness and Eliminate Visible Grind Marks in Silicon Wafers Post Back-Grind

A Dry Etch Approach To Reduce Roughness and Eliminate Visible Grind Marks in Silicon Wafers Post Back-Grind

Soft x-ray performance and fabrication of flight-like blazed transmission gratings for the x-ray spectrometer on arcus probe

Demonstration of resolving power λ/Δλ > 10,000 for a space-based x-ray transmission grating spectrometer

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