The conventional isolated gate driver (GD) solution for the medium-voltage (MV) SiC MOSFET separates the signal and power transmissions and requires a bulky GD power supply (GDPS). This article presents a signal-power integrated GD for MV SiC MOSFETs with a compact footprint. The proposed GD transmits both the pulsewidth modulation (PWM) signal and GD power by 20-MHz modulated class-E resonant flyback converters, where the transmitted GD power can maintain constant within the full PWM duty-cycle range (i.e., 0%-100%). In addition, the PWM signal transmission of the proposed GD achieves a low total propagation delay time < 75 ns by utilizing the fast transient of 20-MHz RFCs and the edge-based envelope detector. A printed-circuit-board-based coreless transformer is integrated into the proposed GD to achieve an insulation voltage higher than 10 kV RMS and a low coupling capacitance of 5.85 pF. The commonmode transient immunity of proposed GD is higher than 100 V/ns, which is beneficial to drive MV SiC MOSFETs with high dv/dt. The proposed GD does not require additional GDPSs nor fiber-optics, which achieves a smaller size compared to conventional isolated GDs and is promising to be integrated into SiC MOSFET module packages. Experimental results on 3.3 kV and 10 kV SiC MOSFETs are provided to validate the effectiveness of the proposed GD. Index Terms-Common-mode transient immunity (CMTI), gate driver (GD), medium-voltage (MV) SiC MOSFETs, MHz-pulsetransformer, signal-power integrated transmission.
I. INTRODUCTIONM EDIUM-VOLTAGE (MV) SiC MOSFETs, which span 2.5 to 15 kV range, have attracted the increased attention recently [1]- [3]. Due to the high blocking voltage, fast switching speed, low switching loss, and high-temperature endurability, newly emerged MV SiC MOSFETs have a great potential to improve the efficiency and power density of MV converters and drive down the system complexity [4], [5]. On the other hand, the isolated gate driver (GD) is required to provide the sufficient galvanic isolation and high common-mode transient immunity (CMTI) for MV SiC MOSFET applications [6].