2002
DOI: 10.1134/1.1470537
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A new nanocluster carbyne-based material synthesized under high pressure

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Cited by 6 publications
(5 citation statements)
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“…The detailed study of DC and AC conductivity and thermopower in hopping regime have been carried in [4][5][6] and confirmed above supposition. It was found [4][5][6] that quasi 1D hopping conductivity persists up to T syn ~ 700°C where the appearance of new sp 2 centers likely leads to the disorder and bending of individual chains in this range of synthesis temperatures. At T syn > 700°C, the increase in the fraction of the sp 2 bonds induces cross-linking between the chains, rendering the conduction two-dimensional.…”
Section: Introductionmentioning
confidence: 67%
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“…The detailed study of DC and AC conductivity and thermopower in hopping regime have been carried in [4][5][6] and confirmed above supposition. It was found [4][5][6] that quasi 1D hopping conductivity persists up to T syn ~ 700°C where the appearance of new sp 2 centers likely leads to the disorder and bending of individual chains in this range of synthesis temperatures. At T syn > 700°C, the increase in the fraction of the sp 2 bonds induces cross-linking between the chains, rendering the conduction two-dimensional.…”
Section: Introductionmentioning
confidence: 67%
“…This opens an intriguing opportunity of creation of an experimental system with variable dimensionality based on carbynes [4]. The detailed study of DC and AC conductivity and thermopower in hopping regime have been carried in [4][5][6] and confirmed above supposition. It was found [4][5][6] that quasi 1D hopping conductivity persists up to T syn ~ 700°C where the appearance of new sp 2 centers likely leads to the disorder and bending of individual chains in this range of synthesis temperatures.…”
Section: Introductionmentioning
confidence: 71%
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“…Note that, if the parent carbyne is a high-resistivity semiconductor [17], processing at 600-800 ° C sharply reduces its resistivity [17,18]. As shown by Demishev et al [21][22][23][24] in studies of the electrical and galvanomagnetic properties of carbynes modified by exposure to high temperatures and pressures, the low-temperature conduction in such materials is due to hopping transport. Increasing the processing temperature from 700 to 900 ° C leads to a transition from quasi-one-dimensional to three-dimensional hopping.…”
Section: Introductionmentioning
confidence: 99%
“…Publication [14] indicates that in order to make estimations in the one-dimensional case one can use coefficient t 2 = 1/360. Therefore, determining parameter T 0 from the measured temperature dependence ρ(T) and using the formula (2), one can calculate localization radius a.…”
mentioning
confidence: 99%