A new n-type and improved p-type pseudo-ternary (Bi/sub 2/Te/sub 3/)(Sb/sub 2/Te/sub 3/)(Sb/sub 2/Se/sub 3/) alloy for Peltier cooling

Ettenberg, M.H.; Jesser, W. A.; Rosi, F.D.

doi:10.1109/ict.1996.553255

Cited by 19 publications

(9 citation statements)

References 4 publications

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“…The record dimensionless figure-of-merit, ZT max = 2.4 has been attained in the artificial superlattice Bi 2 Te 3 -Sb 2 Te 3 materials at 300 K (Venkatasubramanian et al, 2001), however it can be hardly used in thermoelectric generators because of their thermodynamic instability at high temperatures. In spite of many reports on very efficient thermoelectrics (Ettenberg et al, 1996; Polvani et al, 2001), the maximum dimensionless thermoelectric figure-of-merit of n -type materials used in commercial generator applications does not exceed unity above 600 K. In order to enhance the ZT value, the concept of phonon-glass electron-crystal was proposed, which states that the phonons transport (lattice thermal conductivity) should be suppressed as in glasses, and the electrical conductivity should be maintained as in crystals (Wan et al, 2010). Most recent development in thermoelectric materials has been made by nanostructuring to reduce the lattice thermal conductivity.…”

Section: Introductionmentioning

confidence: 99%

Optimization of thermoelectric performance of SrSi2-based alloys via the modification in band structure and phonon-point-defect scattering

2014

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Thermoelectric properties of alkaline-earth-metal disilicides are strongly dependent on their electronic band structure in the vicinity of the Fermi level. In particular, the strontium disilicide, SrSi2 with a narrow band gap of about few tens of meV is composed of non-toxic, naturally abundant elements, and its thermoelectric properties are very sensitive to the substitution/alloying with third elements. In this article, we summarize the thermoelectric performance of substituted and Sr-deficient/Sr-rich SrSi2 alloys to realize the high thermoelectric figure-of-merit (ZT) for practical applications in the electronic and thermoelectric aspects, and also to explore the alternative routes to further improve its ZT value.

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Section: Introductionmentioning

confidence: 99%

Optimization of thermoelectric performance of SrSi2-based alloys via the modification in band structure and phonon-point-defect scattering

2014

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“…It was suggested that reduction of the dimensionality should provide certain controllability over the individual transport coefficients, leading to a dramatic increase in ZT [1]. Bi 2 Te 3 /Sb 2 Te 3 epitaxial superlattices were reported to exhibit a very high ZT of 2.4 at room temperature [2], larger than the maximum ZT of 1.14 for a p -type (Bi 2 Te 3 ) 0.25 (Sb 2 Te 3 ) 0.72 (Sb 2 Se 3 ) 0.03 alloy at room temperature [3], affirming the basic premise. In many cases, however, the decrease in phonon transport also leads to the reduction in power factor due to decrease in electron transport.…”

Section: Introductionmentioning

confidence: 99%

Determining factors of thermoelectric properties of semiconductor nanowires

2011

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It is widely accepted that low dimensionality of semiconductor heterostructures and nanostructures can significantly improve their thermoelectric efficiency. However, what is less well understood is the precise role of electronic and lattice transport coefficients in the improvement. We differentiate and analyze the electronic and lattice contributions to the enhancement by using a nearly parameter-free theory of the thermoelectric properties of semiconductor nanowires. By combining molecular dynamics, density functional theory, and Boltzmann transport theory methods, we provide a complete picture for the competing factors of thermoelectric figure of merit. As an example, we study the thermoelectric properties of ZnO and Si nanowires. We find that the figure of merit can be increased as much as 30 times in 8-Å-diameter ZnO nanowires and 20 times in 12-Å-diameter Si nanowires, compared with the bulk. Decoupling of thermoelectric contributions reveals that the reduction of lattice thermal conductivity is the predominant factor in the improvement of thermoelectric properties in nanowires. While the lattice contribution to the efficiency enhancement consistently becomes larger with decreasing size of nanowires, the electronic contribution is relatively small in ZnO and disadvantageous in Si.

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“…[1][2][3] The materials under consideration have a complex band structure described by a many-valley model of the energy spectrum. 4 Changes of the parameters of ellipsoidal constant-energy surface and scattering of charge carriers affect the thermoelectric and galvanomagnetic properties of the solid solutions depending on the compositions, charge carrier concentrations, and temperature.…”

Section: Introductionmentioning

confidence: 99%

Features of the Behavior of the Figure of Merit for p-Type Solid Solutions Based on Bismuth and Antimony Chalcogenides

Lukyanova

Kutasov

Константинов

et al. 2009

Journal of Elec Materi

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Thermoelectric and galvanomagnetic properties of p-type solid solutions based on bismuth and antimony chalcogenides (Bi,Sb) 2 (Te,Se) 3 have been studied to analyze the features of the figure of merit Z. The increase of Z and ZT for the p-Bi 2Àx Sb x Te 3 composition at x = 1.6 in the temperature interval of 370 K to 550 K was shown to be defined by the increase of the density-of-states effective mass, the slope of the temperature dependence of the carrier mobility, and the reduction of the lattice thermal conductivity for optimal charge carrier concentration. High carrier mobility and low lattice thermal conductivity provide the increase of Z and ZT in the p-Bi 2Àx Sb x Te 3Ày Se y (x = 1.3, y = 0.06) solid solution in the interval from 300 K to 370 K. The growth of Z in these compositions is determined by the increase of the compression of the constantenergy ellipsoids along binary and bisector directions, and by the change of the tilt angle H between the principal axes of the ellipsoids and the crystallographic axes.

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A new n-type and improved p-type pseudo-ternary (Bi/sub 2/Te/sub 3/)(Sb/sub 2/Te/sub 3/)(Sb/sub 2/Se/sub 3/) alloy for Peltier cooling

Cited by 19 publications

References 4 publications

Optimization of thermoelectric performance of SrSi2-based alloys via the modification in band structure and phonon-point-defect scattering

Optimization of thermoelectric performance of SrSi2-based alloys via the modification in band structure and phonon-point-defect scattering

Determining factors of thermoelectric properties of semiconductor nanowires

Features of the Behavior of the Figure of Merit for p-Type Solid Solutions Based on Bismuth and Antimony Chalcogenides

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