A New Model for Threshold Voltage Mismatch Based on the Random Fluctuations of Dopant Number in the MOS Transistor Gate

Difrenza, R.; Llinares, P.; Morin, Gérard; Granger, E.; Ghibaudo, G.

doi:10.1109/essderc.2001.195260

Cited by 9 publications

(1 citation statement)

References 5 publications

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“…5b which presents the ratio between the standard deviation and the mean value of the mirroring precision for each CM. Independently on the configuration, when the circuits approximate to the weak inversion, the mirroring precision departs from unity due to threshold voltage mismatching, which is predominant in this inversion regime [21], however, when the CMs are biased in strong inversion, all configurations present mirroring precision close to unity and the deviation tends to zero among the different samples of the same circuit. Fig.…”

Section: Mirroring Precisionmentioning

confidence: 99%

Experimental and simulation analysis of electrical characteristics of common‐source current mirrors implemented with asymmetric self‐cascode silicon‐on‐insulator n‐channel metal–oxide–semiconductor field‐effect transistors

Assalti

d'Oliveira

Pavanello

et al. 2016

IET Circuits, Devices & Systems

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In this paper, the performance of asymmetric self-cascode (A-SC) fully depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors configuration applied to common-source current mirrors (CMs) have been analysed through experimental measurements, comparing with symmetric self-cascode configuration as well as with standard uniformly doped transistor. The mirroring precision, output resistance and output swing have been used as figures of merit to evaluate the improvements achieved with the use of A-SC transistors. Two-dimensional numerical simulations have been also performed in order to further explore the advantages of A-SC transistor in common-source CMs. The obtained results have shown that the best mirroring precision has been obtained with larger channel lengths of the transistor near the source. Despite the worsened intrinsic mismatching presented by commonsource CMs implemented with A-SC transistors in comparison with single transistor CM, the A-SC structure has allowed larger output resistance, breakdown voltage and better mirroring precision.

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Section: Mirroring Precisionmentioning

confidence: 99%