A new method of formation of impurity-doped diamond films by bias method

Saito, Daisuke; Tsutsumi, Emiko; Ishigaki, N.; Tashiro, Tomoya; Kimura, T.; Yugo, Shigemi

doi:10.1016/s0925-9635(02)00164-4

Cited by 8 publications

(7 citation statements)

References 12 publications

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“…And the electric property is semiconducting with the activation energy E a of about 0.37 eV. 9 However, the value of E a depends on the impurity concentration; this value is consistent with the previous reports of lightly borondoped diamond film. 1,7 Several values of the nitrogenimpurity levels (deep n-type) are reported.…”

Section: Methodssupporting

confidence: 90%

“…For this semiconducting sample the activation energy E a of 0.37 eV was measured from the temperature dependence of the conductivity. 9 Thus, the shift of 0.3-0.4 eV between metallic and semiconducting samples is consistently explained by the small gap with E a of 0.37 eV. In other words, 0.03 at.…”

Section: Methodsmentioning

confidence: 67%

“…The lightly doped diamond film is synthesized using MPCVD method with a h-BN target (BN-diamond). 9 The boron and nitrogen concentrations are estimated to be 0.03 at. % for both boron and nitrogen by secondary ion mass spectroscopy measurements.…”

Section: Methodsmentioning

confidence: 99%

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Electronic structures ofB2pandC2plevels in boron-doped diamond films studied using soft x-ray absor

et al. 2004

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X-ray absorption (XAS) and emission (XES) spectroscopy near B K and C K edges have been performed on metallic (ϳ0.1 at. % B, B-diamond) and semiconducting (ϳ0.03 at. % B and N, BN-diamond) doped diamond films. Both B K XAS and XES spectra show a metallic partial density of states (PDOS) with the Fermi energy of 185.3 eV, and there is no apparent boron-concentration dependence in contrast to the different electric property. In C K XAS spectrum of B-diamond, the impurity state ascribed to boron is clearly observed near the Fermi level. The Fermi energy is found to be almost same with the top of the valence band of nondoped diamond: E V = 283.9 eV. C K XAS of BN-diamond shows both the B-induced shallow level and N-induced deep and broad levels as the in-gap states, in which the shallow level is in good agreement with the activation energy ͑E a = 0.37 eV͒ estimated from the temperature dependence of the conductivity; namely, the change in C 2p PDOS of impurity-induced metallization is directly observed. The electric property of this diamond is ascribed mainly to the electronic structure of C 2p near the Fermi level. The observed XES spectra are compared with the discrete variational X␣ (DVX␣) cluster calculation. The DVX␣ result supports the strong hybridization between B 2p and C 2p observed in XAS and XES spectra, and suggests that the small amount of boron ͑ഛ0.1 at. % ͒ in diamond occupies the substitutional site rather than interstitial site.

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Section: Methodssupporting

confidence: 90%

Section: Methodsmentioning

confidence: 67%

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Electronic structures ofB2pandC2plevels in boron-doped diamond films studied using soft x-ray absor

et al. 2004

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“…The lightly doped diamond film is synthesized using MPCVD method with a h-BN target (BN-diamond). [9] The boron and nitrogen concentrations are estimated to be 0.1at% for both boron and nitrogen by SIMS measurements. And the electric property is semiconducting with the activation energy E a of about 0.37 eV.…”

Section: Methodsmentioning

confidence: 99%

Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy

Nakamura

Kabasawa

Harada

et al. 2010

Physica C: Superconductivity and its Applications

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“…따라서 다양한 형태로 용이하게 합성이 가 능한 다이아몬드 박막 합성에 대한 연구가 수행되어 왔으며, 1982년 일본 과학 기술청 무기재질연구소의 Matsumoto [2] 등은 HFCVD (Hot-Filament CVD)법 으로 새로운 가스 활성 기술에 의한 저압에서의 다이 아몬드 박막 합성법을 발표하였다. 그 이후 연구가 본 격적으로 시작되어, Microwave or RF Plasma CVD(Chemical Vapor Deposition), DC-Plasma Jet법, Milimeter-wave Plasma CVD, Sputter Deposition 등 여러 합성법들이 고안되었다 [3][4][5][6][7][8] (No. 2010-0006466)…”

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Fabrication and Properties of Diamond Thin-Film from N-Hexane by Using Microwave Plasma Process

Han¹,

Kwon²,

Park³

et al. 2011

Journal of the Korean Institute of Illuminating and Electrical

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In this paper, the best conditions for the deposition of the high quality diamond thin-film from N-hexane as a carbon source in the microwave plasma process was carried out. Major parameters are the deposition time, flow rates of oxygen and hexane. The deposition time for the steady state thin-film was required more than 4[h], and the suitable flow rates of hexane and oxygen for the high-quality thin-film are 0.4[sccm] and 0.1～0.2[sccm], respectively. In addition, amorphous carbons such as DLC and graphite were grown by increasing the flow rate of hexane, and it decreased by increasing the flow rate of oxygen. Specifically, the growth rate is about 1.5[㎛h-1] under no addition of oxygen and it decreased about 60[%] as ca. 1.0[㎛h-1] with oxygen.

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A new method of formation of impurity-doped diamond films by bias method

Cited by 8 publications

References 12 publications

Electronic structures ofB2pandC2plevels in boron-doped diamond films studied using soft x-ray absor

Electronic structures ofB2pandC2plevels in boron-doped diamond films studied using soft x-ray absor

Electronic structures of B 2p levels in homo-epitaxial growth boron-doped diamond by soft X-rays absorption spectroscopy

Fabrication and Properties of Diamond Thin-Film from N-Hexane by Using Microwave Plasma Process

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