A new method for measuring the threshold voltage of small-geometry MOSFETs from subthreshold conduction

Deen, M. Jamal; Yan, Z.X.

doi:10.1016/0038-1101(90)90234-6

Cited by 28 publications

(6 citation statements)

References 19 publications

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“…As stated in the introduction, once a set of parameters has been determined by a direct method ( [45,46,49,[51][52][53]), the parameter extraction can be improved by a global optimization process that takes into account possible interactions between the parameters. Different techniques can be used for this global optimization, which are usually hampered by the high dimensionality of the problem (the set of parameters to be extracted or optimized are usually composed of tens of elements).…”

Section: Evolutionary Algorithmsmentioning

confidence: 99%

Evolutionary parameter extraction for an organic TFT compact model including contact effects

Romero

González

Picos

et al. 2018

Organic Electronics

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In this work, an evolutionary parameter extraction procedure is combined with a compact model for the current-voltage characteristics of organic thin-film transistors as a part of a circuit design tool to extract the device parameters. This procedure can be used to overcome shortcomings of previous parameter extraction procedures. The proposed evolutionary procedure can be used in those situations whereby the parameter set extracted by other procedures does not comply its physical meaning, or if a poor agreement between the experimental data and the analytical results exists. In the last case, the evolutionary procedure can be used as a problem optimization method. After the evolutionary parameter extraction procedure is applied to the transistor output characteristics, the obtained results show an excellent agreement with the experimental data.

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Section: Evolutionary Algorithmsmentioning

confidence: 99%

Evolutionary parameter extraction for an organic TFT compact model including contact effects

Romero

González

Picos

et al. 2018

Organic Electronics

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“…In this letter, V t is extracted by the linear extrapolation method [8], [9]. The assumptions of V t dependence on temperature and body bias are modeled simultaneously in the following approximate expressions:…”

Section: Dtmos Ztc Modelingmentioning

confidence: 99%

The Zero-Temperature-Coefficient Point Modeling of DTMOS in CMOS Integration

Wang

Lin

Chao

2010

IEEE Electron Device Lett.

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For the first time, analytical expressions of zerotemperature-coefficient (ZTC) point modeling of DTMOS transistor are successfully presented in detail. New analytical formulations for the linear and saturation regions of DTMOS transistor operation that make certain the drive current to be temperature independent for the ideal gate voltage are developed. The maximum errors of 0.87% and 2.35% in the linear and saturation regions, respectively, confirm a good agreement between our DTMOS ZTC point model and the experimental data. Compared to conventional MOSFET, the lower V g (ZTC) with higher overdrive current of DTMOS improves the integrated circuit speed and efficiency for the low-power-consumption concept in green CMOS technology.

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“…Moreover, the problem of the V T extraction is complicated by the dependence of V T from the channel length. Especially for small geometry devices, more complex V T extraction procedures which take into account the short channel effects, are required [3].…”

Section: L644 G Giusi Et Almentioning

confidence: 99%

A New Technique for Extracting the Mosfet Threshold Voltage Using Noise Measurements

et al. 2004

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In this work we propose a new technique for the evaluation of the threshold voltage of MOS transistors based on the measurement of the channel thermal noise. Since this new method allows the evaluation of the threshold voltage without any current flowing through the channel, it inherently eliminates the limitations coming from the need of using too approximate models for the interpretation of current-voltage measurements in MOS devices. The results of actual measurements on p-channel MOSFETs are reported that confirm the validity and the significance of the proposed approach.

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A new method for measuring the threshold voltage of small-geometry MOSFETs from subthreshold conduction

Cited by 28 publications

References 19 publications

Evolutionary parameter extraction for an organic TFT compact model including contact effects

Evolutionary parameter extraction for an organic TFT compact model including contact effects

The Zero-Temperature-Coefficient Point Modeling of DTMOS in CMOS Integration

A New Technique for Extracting the Mosfet Threshold Voltage Using Noise Measurements

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