A new method for elimination of emitter edge dislocations of silicon planar NPN transitors

Stojadinović, N.; Popović, R.S.

doi:10.1002/pssa.2210550135

Cited by 3 publications

(2 citation statements)

References 29 publications

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“…This process is driven by the high residual, in particular compressive, stress resulting from phosphorus incorporation into silicon [18,19].…”

Section: Resultsmentioning

confidence: 99%

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Recrystallization Behavior of Aluminum Layers in Al/Ti/Si and Al/Ti/SiOx/Si Structures

Snitovsky

2005

Inorg Mater

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“…This process is driven by the high residual, in particular compressive, stress resulting from phosphorus incorporation into silicon [18,19].…”

Section: Resultsmentioning

confidence: 99%

“…The absence of whiskers on the surface of the Al/Ti/ p + -Si regions suggests that there is no compressive stress and that boron doping of silicon enhances the stability of the heterostructure during heat treatment [19].…”

Section: Resultsmentioning

confidence: 99%

Recrystallization Behavior of Aluminum Layers in Al/Ti/Si and Al/Ti/SiOx/Si Structures

Snitovsky

2005

Inorg Mater

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Inhomogeneous Distributuon of Dislocations in Phosphorus-Diffused Silicon

Itoh

Nakau

1982

Jpn. J. Appl. Phys.

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CZ-silicon wafers subjected to phosphorus diffusion to a relatively deep diffusion depth (X j=8 µm, C s=1020 cm-3) using a POCl3 source are examined both by X-ray topography and by transmission electron microscopy. The diffusion corresponds to that for the formation of the emitter of the usual silicon power transistors. Diffusion-induced dislocations are inhomogeneously distributed, forming dislocation clusters about 50 µm wide at a depth of 4–6 µm. In the cluster, the maximum dislocation density is as high as 109 cm-2 at a depth of 4 µm and some dislocations reach the diffusion depth. Between the clusters, there are dislocation networks of relatively low density. The deep penetration of dislocations is attributed to the formation of the clusters.

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Structural and morphological properties of contacts to a (111) orientation monosilicon substrate based on aluminum with a Ti and w – 10 % Ti barrier layer

Snitovsky

2022

Yugra State University Bulletin

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The paper presents the results of studies on the formation of ohmic contacts to monosilicon from aluminum in the presence of a thin-film barrier layer based on titanium and tungsten. The purpose of reseach: to study the mechanism of solid-phase interaction in Al/Ti/Si and Al/Ti/SiOx/Si systems during the formation of contacts to (111) orientation silicon based on aluminum with a Ti and W 10% Ti barrier layer, their structural and morphological properties and ways to manage this mechanism. The study revealed relationships between the structure and properties of the films, which can lead to marriage or a decrease in the service characteristics of the IC due to a violation of the structure of the film composition. Methods and objects of research: It is shown that the difference in the behavior of thick and thin oxides is consistent with the thermodynamic data for bulk materials. In this case, the formation and final electrical properties of the silicidesilicon interface region depend on the presence of unavoidable impurities present during the deposition of the reacting metal. As a result of electron microscopic studies of the Al/WTi/Si system, it was found that the tungsten10 % (wt.) titanium barrier layer is reliably thermally stable up to a temperature of 773 K, regardless of the layer thickness (0.050.12 m).

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A new method for elimination of emitter edge dislocations of silicon planar NPN transitors

Cited by 3 publications

References 29 publications

Recrystallization Behavior of Aluminum Layers in Al/Ti/Si and Al/Ti/SiOx/Si Structures

Recrystallization Behavior of Aluminum Layers in Al/Ti/Si and Al/Ti/SiOx/Si Structures

Inhomogeneous Distributuon of Dislocations in Phosphorus-Diffused Silicon

Structural and morphological properties of contacts to a (111) orientation monosilicon substrate based on aluminum with a Ti and w – 10 % Ti barrier layer

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