A new mechanism of light-induced reversible changes in a-Si:H p-i-n solar cells

Griffiths, D. Ll.; Zhen-Xu, Zheng; He, Yue-Song; Ma, Hongjuan

doi:10.1016/0379-6787(89)90077-x

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Solar Cells

1989

DOI: 10.1016/0379-6787(89)90077-x

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A new mechanism of light-induced reversible changes in a-Si:H p-i-n solar cells

D. Ll. Griffiths

Zheng Zhen-Xu

Yue-Song He

et al.

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1994

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On the correlation among photodegradation, charged dangling bonds and microstructure in hydrogenated amorphous silicon

Irrera¹

1994

Journal of Applied Physics

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We propose that in hydrogenated amorphous silicon the mechanism of conversion from charged to neutral dangling bonds adds to the weak Si—Si bond breaking during light soaking. Our model is developed from an equilibrium picture of the density of states as given by the defect pool theory [K. Winer, Phys. Rev. B 41, 150 (1990)] and predicts an increase rate of the neutral dangling bonds density (D0) proportional to (1/D0)2, which is related either to the charged defect conversion probability and to the bond-breaking probability. This model explains photoconductivity experiments and, in particular, the short-time features: it shows that the photodegradation is enhanced in clustered hydrogen-rich samples provided the density of charged dangling bonds is correlated with the clustered hydrogen present in the amorphous network.

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On the correlation among photodegradation, charged dangling bonds and microstructure in hydrogenated amorphous silicon

Irrera¹

1994

Journal of Applied Physics

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A new mechanism of light-induced reversible changes in a-Si:H p-i-n solar cells

Cited by 1 publication

References 6 publications

On the correlation among photodegradation, charged dangling bonds and microstructure in hydrogenated amorphous silicon

On the correlation among photodegradation, charged dangling bonds and microstructure in hydrogenated amorphous silicon

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