A New Low Voltage Analog Circuit Model for Hodgkin–Huxley Neuron Employing FGMOS Transistors

Abstract

A low voltage analog VLSI circuit model for Hodgkin–Huxley (HH) neuron cell equations (HH neuron model) is presented. Floating gate MOSFET (FGMOS) transistors in weak inversion region have been used to model HH equations such as gating variables, [Formula: see text] and [Formula: see text] functions and combined action of [Formula: see text], [Formula: see text] and [Formula: see text]. The combination of [Formula: see text], [Formula: see text] and [Formula: see text] controls the Na[Formula: see text] and K[Formula: see text] channel currents. The superiorities of the proposed circuits are low supply voltage, low power consumption, less circuit complexity and as a result, low costs are compared to the previous works. The proposed circuit which uses 24 transistors is simulated in Hspice software using 0.18[Formula: see text] technology and consumes 119[Formula: see text][Formula: see text]W.

A Raspberry Pi Based Hardware Implementations of Various Neuron Models

“…Salmanpour et al designed an HH model with low-source voltage based on Floating-Gate Metal-Oxide-Semiconductor (FGMOS) transistors. They aimed to reduce complexity, power consumption and size by reducing the number of transistors (Salmanpour et al 2018).…”