A new low-temperature high-aspect-ratio MEMS process using plasma activated wafer bonding

Galchev, T.; Welch, W.C.; Najafi, K.

doi:10.1088/0960-1317/21/4/045020

Cited by 3 publications

(2 citation statements)

References 35 publications

(77 reference statements)

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“…Plasma activation using dielectric barrier discharges (DBDs) at atmospheric pressure has proved to be a suitable pre-treatment process for low-temperature direct bonding of silicon wafers (1,2,3). The activation with a DBD in oxygen process gas is known to form a porous silicon dioxide which apparently has beneficial structural properties for lowtemperature bonding (4).…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Direct Bonding of Borosilicate, Fused Silica, and Functional Coatings

et al. 2010

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An experimental study of low-temperature bonding of plasma-treated borosilicate glass and fused silica wafers as well as silicon substrates carrying thin films of silicon dioxide, silicon nitride, silicon oxynitride, and indium tin oxide, respectively, is reported. Plasma process parameters were optimized in order to maximize bond energy. Surface energy measurements were carried out in situ during annealing, helping to understand the kinetics of the bonding process. Power spectral density measurements on debonded wafers support the idea of the strong impact of micro-contact formation on bonding kinetics.

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Section: Introductionmentioning

confidence: 99%

Low-Temperature Direct Bonding of Borosilicate, Fused Silica, and Functional Coatings

et al. 2010

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“…High-aspect-ratio-micromachining processes, such as deep reactive ion etching (DRIE), have enabled the realization of MEMS devices with even larger angular motion [14,15]. Uma et al have demonstrated a 3D stacked micromirror with an improved performance of tilt angle of about 40 • at resonant frequency [16].…”

Section: Introductionmentioning

confidence: 99%

Realization of Three-Dimensionally MEMS Stacked Comb Structures for Microactuators Using Low-Temperature Multi-Wafer Bonding with Self-Alignment Techniques in CMOS-Compatible Processes

Teo

2021

Micromachines

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A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple wafer bonding. These out-of-plane comb drives are used for the bias actuation to achieve a larger tilt angle for micromirrors. The high-aspect-ratio mechanical structure is realized by the deep reactive ion etching of silicon, and the notching effect in silicon-on-insulator (SOI) wafers is minimized. The low-temperature bonding of two patterned wafers is achieved with fusion bonding, and a high bond strength up to 2.5 J/m2 is obtained, which sustains subsequent processing steps. Furthermore, the dependency of resonant frequency on device dimensions is studied systematically, which provides useful guidelines for future design and application. A finalized device fabricated here was also tested to have a resonant frequency of 17.57 kHz and a tilt angle of 70° under an AC bias voltage of 2 V.

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Low-temperature direct bonding of glass nanofluidic chips using a two-step plasma surface activation process

Wang

Dong

et al. 2011

Anal Bioanal Chem

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Owing to the well-established nanochannel fabrication technology in 2D nanoscales with high resolution, reproducibility, and flexibility, glass is the leading, ideal, and unsubstitutable material for the fabrication of nanofluidic chips. However, high temperature (~1,000 °C) and a vacuum condition are usually required in the conventional fusion bonding process, unfortunately impeding the nanofluidic applications and even the development of the whole field of nanofluidics. We present a direct bonding of fused silica glass nanofluidic chips at low temperature, around 200 °C in ambient air, through a two-step plasma surface activation process which consists of an O(2) reactive ion etching plasma treatment followed by a nitrogen microwave radical activation. The low-temperature bonded glass nanofluidic chips not only had high bonding strength but also could work continuously without leakage during liquid introduction driven by air pressure even at 450 kPa, a very high pressure which can meet the requirements of most nanofluidic operations. Owing to the mild conditions required in the bonding process, the method has the potential to allow the integration of a range of functional elements into nanofluidic chips during manufacture, which is nearly impossible in the conventional high-temperature fusion bonding process. Therefore, we believe that the developed low-temperature bonding would be very useful and contribute to the field of nanofluidics.

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A new low-temperature high-aspect-ratio MEMS process using plasma activated wafer bonding

Cited by 3 publications

References 35 publications

Low-Temperature Direct Bonding of Borosilicate, Fused Silica, and Functional Coatings

Low-Temperature Direct Bonding of Borosilicate, Fused Silica, and Functional Coatings

Realization of Three-Dimensionally MEMS Stacked Comb Structures for Microactuators Using Low-Temperature Multi-Wafer Bonding with Self-Alignment Techniques in CMOS-Compatible Processes

Low-temperature direct bonding of glass nanofluidic chips using a two-step plasma surface activation process

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