A new light-responsive resistive random-access memory device containing hydrogen-bonded complexes

Abstract

In the search to obtain new and more efficient components of memory devices, we report the photochromic, dielectric and electrochemical response of a light-responsive organic compound, and its memory performance under electrical fields. The so-called N(1)-[12-(4-(4'-isobutyloxyphenyldiazo)phenoxy)dodecyloxy)]thymine, tAZOi, molecule contains one azobenzene group, which provides with photochromic character, and one terminal thymine group, capable to form hydrogen bonds and assemble supramolecular dimers, (tAZOi)2. We have calculated the optical absorption coefficient, extinction coefficient and refractive index of tAZOi, which obeys the single oscillator Wemple-DiDomenico model. An ITO/tAZOi/Al device has been prepared and presents two switchable conductance states with preservation of memory performance. The mechanism linked to the resistive randomaccess memory (RRAM) has been evaluated by molecular modelling and is controlled by ptype conduction, possibly involving hydrogen-bonding. Upon UV irradiation at ~365 nm, tAZOi displays an increase in the complex permittivity driven by trans-to-cis

Dicationic stilbazolium salts: Structural, thermal, optical, and ionic conduction properties

“…Despite being promising, the conductivity values obtained in this work are still two-fold smaller than benchmark ionic liquid electrolytes [98], and phosphonium or imidazolium-based ionic liquids (10 −2 S cm −1 , at 30 °C) [99]. The introduction of light responsive elements to promote local motions through reversible conformational changes [100], as well as the alignment of conductivity pathways via liquid crystalline regions [101], [102], [103], [104], will be explored as strategies to increase conductivity at low temperatures in triflimide salts derived from this study.…”

Improving the Photoresponse of Transistor Memory Using Self-Assembled Nanostructured Block Copolymers as a Photoactive Electret

“…Owing to the miniaturization of the electronic device, physical interactions in nanoscales have become increasingly important. 36−38 Recently, strategies have been exerted on the electrets of phototransistor memory primarily using (i) chelation between polymer−perovskite based on Lewis acid−base association, 39 (ii) hydrogen bonding, 40 and (iii) charge-transfer interaction 35 to produce the optoelectronic characteristics. However, little attention has been given to directly tailor photoactive and nanostructured BCP electrets into phototransistors.…”

“…In addition, the optimized CT interaction between pyrene and TCNQ endows the materials with favorable molecular association, photoelectrical properties, and charge ordering, conducing to the better retention capability and bistable switching phenomenon. Owing to the miniaturization of the electronic device, physical interactions in nanoscales have become increasingly important. − Recently, strategies have been exerted on the electrets of phototransistor memory primarily using (i) chelation between polymer–perovskite based on Lewis acid–base association, (ii) hydrogen bonding, and (iii) charge-transfer interaction to produce the optoelectronic characteristics. However, little attention has been given to directly tailor photoactive and nanostructured BCP electrets into phototransistors.…”