A new latch-free LIGBT on SOI with very high current density and low drive voltage

Olsson, Jörgen; Vestling, Lars; Eklund, Klas-Håkan

doi:10.1016/j.sse.2015.08.011

Cited by 5 publications

(1 citation statement)

References 13 publications

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“…Some properties are important for the SOI-LIGBT, e.g. the trade-off between the on-state voltage drop (V CE(sat) ) and the turn-off loss (E off ) [4], the latch-up immunity [5], the short circuit capability [6] and the dynamic avalanche immunity [7]. In order to improve the trade-off between V CE(sat) and E off , multi-emitter structures [8,9] and the carrier stored (CS) layer [10] have been introduced into the * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

A novel double RESURF SOI-LIGBT with dynamic avalanche immunity and low losses

Li¹,

Huang²,

Ma³

et al. 2023

Semicond. Sci. Technol.

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A novel trench gates double reduced surface field (RESURF) lateral insulated gate bipolar transistor based on silicon-on-insulator (SOI-LIGBT) is proposed and investigated. A p-top layer connected to the Emitter via two series diodes and n-rings surrounding the bottom of trench gates are used to reduce the on-state voltage drop (VCE(sat)) and turn-off loss (Eoff). A deep trench with a p-ring is introduced to form a gate-drain shorted PMOS, which can automatically raise the potential of the p-ring during turning off so as to enhance the dynamic avalanche immunity. Besides, the deep trench with a p-ring can shield the high electric field from n-rings at the blocking state, which avoids the breakdown of n-rings. Simulation results indicate that, the proposed LIGBT can be safely turned off even under a bus voltage equal to the breakdown voltage (VB), and VCE(sat) under Eoff = 1 mJ/cm2 can be 24% lower than that of the conventional LIGBT.

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