A new large-well 1024×1024 Si:As detector for the mid-infrared

The Wide-field Infrared Survey Explorer (WISE) is a NASA MidEx mission which will survey the entire sky at 3.3, 4.7, 12 and 23 microns. As with most all-sky surveys, WISE results will address many fundamental topics, but the passbands and sensitivity are particularly well suited to study the distribution and evolutionary history of brown dwarfs and ultra-luminous IR galaxies. The two long wavelength bands will use 1024x1024 Si:As BIB detectors manufactured by DRS Sensors & Targeting Systems. NASA ARC has optimized the operating parameters as well as conducted detailed cryogenic performance and radiation testing of a prototype array. Dark current, noise performance, and radiation test results will be reported.

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“…The development of a related (but high-background) megapixel device from DRS is described by Mainzer et al 5 .…”

Section: Description Of Devicesmentioning

confidence: 99%

Cryogenic testing of a 1024x1024 Si:As array for WISE

et al. 2007

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“…7) For maximum reasonable observing time in a limited lifetime of IR astronomical satellites, high-sensitivity far-IR detectors in the ∼60-200 µm wavelength range should have a larger array format with megapixel levels as have been achieved for silicon (Si)-based mid-IR detectors. 8,9) Ge-based blocked impurity band (Ge BIB) detectors have the potential to be sensitive out to ∼200 µm without any stressing mechanisms, 10) and are thus expected to make a big push to realize larger-format far-IR detectors. As shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of the compensation ratio of heavily-Ga doped Ge for far-infrared detectors in astronomy

Suzuki¹,

Kaneda²,

Wada³

et al. 2018

Jpn. J. Appl. Phys.

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Ge-based blocked impurity band detectors fabricated with the surface-activated wafer bonding (SAB) method are expected to realize larger format arrays for far-infrared astronomical observations. To make sensitive p-type Ge detectors, the minor impurity (ND) concentration of a heavily-impurity doped Ge wafers is required to be <1014 cm−3 in addition to the major impurity (NA) concentration of ∼1016 cm−3. Thus, a compensation ratio K (= ND/NA) below 10−2 should be achieved in advance to SAB. We measured the resistivity and carrier density of heavily-Ga doped Ge wafers at temperatures of 3–300 K. However, ND and NA of the wafers cannot be obtained from the conventional model for p-type semiconductors due to the significant contribution of the impurity band conduction (IBC). Then, an extended model including the IBC process was constructed, which was found to well reproduce the measured data over the whole temperature range. From the values obtained from the model fitting, it is revealed that our heavily-Ga doped Ge wafers show NA ∼ 1016 cm−3 with ultra-low K below 10−3.

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“…Megapixel BIB focal plane arrays for higher-flux operation are under development for ground-based instruments. 6 While current silicon BIB detectors are limited to 40 µm, this wavelength cutoff depends on the dopant concentration in the main infrared sensitive layer of the detector structure. The extension of silicon BIB detector wavelength range to at least 70 µm appears to be feasible by increasing doping level to several times the levels typically used.…”

Section: Objective and Approachmentioning

confidence: 99%

Far-infrared blocked impurity band detector development

et al. 2007

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DRS Sensors & Targeting Systems, supported by detector materials supplier Lawrence Semiconductor Research Laboratory, is developing far-infrared detectors jointly with NASA Langley under the Far-IR Detector Technology Advancement Partnership (FIDTAP). The detectors are intended for spectral characterization of the Earth's energy budget from space. During the first year of this effort we have designed, fabricated, and evaluated pilot Blocked Impurity Band (BIB) detectors in both silicon and germanium, utilizing pre-existing customized detector materials and photolithographic masks. A second-year effort has prepared improved silicon materials, fabricated custom photolithographic masks for detector process, and begun detector processing. We report the characterization results from the pilot detectors and other progress.

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A new large-well 1024×1024 Si:As detector for the mid-infrared

Cited by 8 publications

References 5 publications

Cryogenic testing of a 1024x1024 Si:As array for WISE

Cryogenic testing of a 1024x1024 Si:As array for WISE

Evaluation of the compensation ratio of heavily-Ga doped Ge for far-infrared detectors in astronomy

Far-infrared blocked impurity band detector development

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