A New IR-Drop Model That Improves Effectively the Brightness Uniformity of an AMOLED Panel

Chao, Paul C.-P.; Cheng, Shih-Song; Chen, Chiu-Hao; Lee, Kuei-Yu

doi:10.1109/jeds.2022.3193303

Cited by 5 publications

(1 citation statement)

References 24 publications

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“…, and V sel [m] in horizontal direction. The dc reference voltage V ref could be placed in either horizontal or vertical directions to connect to T4 and T5 of each circuit, for the power sources supplying large current to make all ELs of the pixel array illuminate, ELVDD is suggested to place in both horizontal and vertical directions connecting into the circuit for performing a good resistance to suppress the IR-drop caused from the evitable voltage drops occurred when ELs illuminating [27], while ELVSS would be applied to the thin metal that is made on the top of all ELs, where the ELs are commonly made with the process of thermal evaporation, forming at the intermediate of the circuit and the metal of ELVSS. Accordingly, the feasibility of the proposed circuit to implement on high PPI displays is verified.…”

Section: The Row Gate Signals Of S1[n] S2[n] and Em[n] Would Be Place...mentioning

confidence: 99%

A High 5292-PPI Pixel Circuit for Micro Displays With 10-Bit Gray Levels Realized via the Technique of Analog Sub-Frame Integral

Cheng,

Chao

2023

IEEE J. Electron Devices Soc.

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A pixel circuit driven in small range of data voltage (Vdata) is proposed for high pixel-per-inch (PPI) micro displays, using the new driving technique of analog sub-frame integral (A-SFI) to realize the required current integrals of gray levels. This circuit runs with two analog Vdata's configurated by 7-bit digital-to-analog converters (DACs), outputting 10-bit integral currents by receiving a digital voltage of Vsel at each sub-frame that is one of eight (3-bit) equally divided from an illuminating period. With the 1-LSB of 5mV assumed, the estimated Vdata range of 0.64V, which is apparently lower than at least 5V of a conventional circuit made by high voltage FETs (HVFETs), assists the proposed circuit in mainly constructing by the low voltage FETs (LVFETs) that are driven by about 1V; therefore, its pixel layout could be shrank for high PPI. Implementing this circuit in a 1.03-inch, high 5292PPI micro OLED panel made via that 55nm CMOS process for the validations, the simulated results over the displaying range show the iDNL's of within +1.15iLSB and −1.01iLSB, the iINL's of within +1.53iLSB and −1.05iLSB, and the iAD's of within +1.94% and −1.18%, observed the favorable linearities or deviations to the generated integral currents along 10-bit grayscales. The experimental results show the lDNL's of within +3.12lLSB and −1.75lLSB, and the lINL's of within +3.35lLSB and −2.29lLSB, validated the viability of this technique for high PPI displays.

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Section: The Row Gate Signals Of S1[n] S2[n] and Em[n] Would Be Place...mentioning

confidence: 99%

A High 5292-PPI Pixel Circuit for Micro Displays With 10-Bit Gray Levels Realized via the Technique of Analog Sub-Frame Integral

Cheng,

Chao

2023

IEEE J. Electron Devices Soc.

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P‐129: A Self‐adaptive Gamma LUT Conversion to Achieve Optical Consistency under a Variety of IR‐drop Compensation Scenarios

Yang,

Ma,

Pai

et al. 2023

Symp Digest of Tech Papers

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The OLED display can support various IRC conditions for better user experience. However, the more IRC conditions in display, the more gamma Look‐Up Tables (LUT) are required. This paper proposed a method to convert gamma LUT automatically according to IRC condition of itself. The proposed method can save the One‐Time‐Programmable (OTP) memory and shorten the production time. Up to 80% OTP size and time could be saved in the experimental results. In addition, the converted gamma LUT have better optical consistency than the traditional measured gamma LUT.

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P‐15.11: Sparse‐Storage‐based IR‐Drop Algorithm for High Resolution OLED Panels

Ren,

Li,

Feng

et al. 2024

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Due to the extremely large size of driver circuits for high‐resolution OLED panels, IR‐drop analysis has become a computationally challenging problem both in terms of runtime and memory usage. In this paper, an IR‐drop algorithm based on sparse storage is proposed for OLED panels with high resolution. Firstly, an equivalent circuit model of the driving circuit of an OLED panel is establishedIR‐drop. Secondly, an IR‐drop model based on vector and matrix equations is established by using the Kirchhoff law, and the IR‐drop of an OLED panel with high resolution is solved accurately by applying the sparse representations in the field of artificial intelligence. Experimental results show that the algorithm in this paper can accurately solve the IR‐drop for OLED panels with a resolution of 8k. For the solution of a 32M nodes, the algorithm in this paper takes 120.716s to achieve the accurate solution. The proposed algorithm can solve the IR‐drop of OLED panel with high resolution faster and more accurate, which present high practicability.

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A New IR-Drop Model That Improves Effectively the Brightness Uniformity of an AMOLED Panel

Cited by 5 publications

References 24 publications

A High 5292-PPI Pixel Circuit for Micro Displays With 10-Bit Gray Levels Realized via the Technique of Analog Sub-Frame Integral

A High 5292-PPI Pixel Circuit for Micro Displays With 10-Bit Gray Levels Realized via the Technique of Analog Sub-Frame Integral

P‐129: A Self‐adaptive Gamma LUT Conversion to Achieve Optical Consistency under a Variety of IR‐drop Compensation Scenarios

P‐15.11: Sparse‐Storage‐based IR‐Drop Algorithm for High Resolution OLED Panels

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