A new high-voltage integrated switch: the "thyristor dual" function

Sanchez, Jean-Louis; Breil, M.; Austin, Patrick; Laur, J.-P.; Jalade, J.; Rousset, Bernard; Foch, Henri

doi:10.1109/ispsd.1999.764086

Cited by 7 publications

(1 citation statement)

References 3 publications

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“…Moreover, a self-powered two-port circuit breaker architecture was proposed allowing for placement directly in a circuit branch [9]- [11]. Obtaining such characteristics with a single device has long been the goal of additional efforts revolving around the "thyristor dual" principle [12]- [20]. Here, an n-channel JFET (nJFET) and a p-channel JFET (pJFET) are interconnected as shown in Fig.…”

Section: Introductionmentioning

confidence: 99%

A Monolithically Integrated SiC Circuit Breaker

Boettcher

Erlbacher

2021

IEEE Electron Device Lett.

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In this letter, a monolithically integrated SiC circuit breaker device providing self-triggered blocking operation is presented. The proposed topology is implemented into a common 4H-SiC JFET technology, which offers conventional cell design and chip scaling opportunities. Basic operation and design implications are discussed on the basis of quasi-static electrical measurements of fabricated nJFET, pJFET and circuit breaker devices. The design of experiment including a variation of channel length and channel doping dose reveals a distinct effect on the design targets, especially on on-state resistance, trigger current and blocking voltage. The investigated devices exhibit trigger current density levels of up to 2.8 A/cm² and self-sustained blocking capability up to 795 V DC-link voltage. On-state resistance at room temperature is determined to 0.93 Ωcm² but drastically decreases at elevated temperatures, as is shown in the experiments.

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