1968 International Electron Devices Meeting 1968
DOI: 10.1109/iedm.1968.188053
|View full text |Cite
|
Sign up to set email alerts
|

A new germanium photodiode with extended long-wavelength response

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
1

Citation Types

0
3
0

Year Published

1970
1970
1994
1994

Publication Types

Select...
2

Relationship

0
2

Authors

Journals

citations
Cited by 2 publications
(3 citation statements)
references
References 0 publications
0
3
0
Order By: Relevance
“…where nD is the dark-counting rate, NEP is the detector noise-equivalent power, T is the measurement time, -q is the photon-detection efficiency of the detector, and hv is the photon energy. The dark counts essentially result from three contributions: (1) carriers emitted from trapping levels that were populated in previous avalanche pulses, (2) carriers thermally generated in the active volume of the device, and (3) carriers generated by band-to-band tunneling processes.' 9 The contribution arising from trapping centers is due to the peculiar single-carrier sensitivity of the Geiger-mode operation.…”
Section: Dark-counting Rate and Sensitivitymentioning
confidence: 99%
See 2 more Smart Citations
“…where nD is the dark-counting rate, NEP is the detector noise-equivalent power, T is the measurement time, -q is the photon-detection efficiency of the detector, and hv is the photon energy. The dark counts essentially result from three contributions: (1) carriers emitted from trapping levels that were populated in previous avalanche pulses, (2) carriers thermally generated in the active volume of the device, and (3) carriers generated by band-to-band tunneling processes.' 9 The contribution arising from trapping centers is due to the peculiar single-carrier sensitivity of the Geiger-mode operation.…”
Section: Dark-counting Rate and Sensitivitymentioning
confidence: 99%
“…Tunneling processes are negligible in silicon SPAD's with Vb values higher than 10 V because of the large silicon band gap, and they set the ultimate dark-counting rate achievable with germanium SPAD's.1 9 Figure 10 shows the dependence on temperature of the dark-counting rate of a F-APD in the self-quenching regime. 2 ' The measurements were performed with one of the device's contacts connected to the voltage source through a 10-kfl resistor and the other connected to a 1-kfl resistor, which was employed to measure the avalanche current flowing through the device. The bias was adjusted to have a reverse current of 40 A.…”
Section: Dark-counting Rate and Sensitivitymentioning
confidence: 99%
See 1 more Smart Citation