A new generation of small pixel pitch/SWaP cooled infrared detectors

Espuno, Laurent; Pacaud, O.; Reibel, Yann; Rubaldo, L.; Kerlain, A.; Péré‐Laperne, Nicolas; Dariel, A.; Roumegoux, Julien; Brunner, A.; Kessler, Antoine; Gravrand, O.; Castelein, Pierre

doi:10.1117/12.2197170

Cited by 3 publications

(3 citation statements)

References 3 publications

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“…In 2012, DEFIR demonstrated for the first time a 10μm pitch FPA. In 2014, SOFRADIR and CEA-LETI developed the famous DAPHNIS digital detector components, DAPHNIS-HD720 and DAPHNIS-XGA, by combining "Small Pixel Pitch" and "HOT" technology [15,45]. The pixel pitch of the ROIC is 10μm and the array size are 1280×720 and 1024×768 respectively.…”

Section: Other Research Results In French Israeli and Turkeymentioning

confidence: 99%

“…In order to greatly enhance the total IRFPA performance of infrared thermal imagers, reachers in Israel, France, and Turkey have introduced useful goods for digital infrared focal plane array detector components in specifications like 640×512, 1280×1024, and 1920×1536 [9][10][11]. Particularly, the SWaP (Size, Weight, and Power) has been proposed for the digital infrared focal plane array detector components [12][13][14][15].…”

Section: Introductionmentioning

confidence: 99%

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Research progress on digital ROIC of infrared focal plane array detector

Zhao,

Zhang,

Yuan

et al. 2023

Fourteenth International Conference on Information Optics and Photonics (CIOP 2023)

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Section: Other Research Results In French Israeli and Turkeymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Research progress on digital ROIC of infrared focal plane array detector

Zhao,

Zhang,

Yuan

et al. 2023

Fourteenth International Conference on Information Optics and Photonics (CIOP 2023)

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“…Smaller pixel pitches are the key to meet the requirements [10]. Previous works have been presented by CEA-LETI on non-p diode technology with 10, 7.5 and 5 µm pixel pitch [11] [12] and more recently on p-on-n technology [13] with superpixels made of 4 7.5 µm pitch diodes. This achievement was possible with the instruction of a new generation (NG) of p-on-n diode technology, developed by CEA-LETI and Lynred, which improves both manufacturability and noise performances.…”

Section: Introductionmentioning

confidence: 99%

Small pixel pitch MCT P on N MWIR photodiodes at DEFIR: towards 7.5um and beyond with very high image quality

Baier

Gravrand

LeGoff

et al. 2023

Infrared Technology and Applications XLIX

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MCT p-on-n photodiodes manufactured at Lynred and CEA-LETI have demonstrated state of the art performances for HOT applications. On blue and red mid infrared bands on 15μm pixel pitch, respectively 150 and 130K operating temperatures have been obtained, due to diffusion limited dark current and low defectivity. To achieve equivalent results on smaller pixel, the p-on-n technology at DEFIR, joint laboratory between Lynred and CEA-LETI, has been improved. The technological process was modified to ensure a proper diode formation and to efficiently passivate the interface between MCT and encapsulation layers, especially in the vicinity of the space charge region. The manufactured arrays with a 5.3μm cutoff wavelength have been hybridized on a digital output SXGA (1280×1024) direct injection ROIC with a pixel pitch of 7.5 μm. This paper present the measured current, blackbody responsivity and RMS noise on FPAs with F/4 numerical aperture. We will also discuss spectral response, quantum efficiency, shot-noise limited photodiodes and noise histograms shapes and their distribution tails at 130K. The very low number of defective pixel allow to address higher operating temperature and measurements have been performed at 140K and even 150K with very limited performance degradation. Pixel pitch of 5 μm has been characterized on test chips and present I-V curves with low dispersion and long bias plateau. As for larger pixel sizes, these photodiodes are shot-noise limited. Modulation transfer function has been measured by electron beam induced current and presents high value, up to 56%.

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Dependence of the Modulation Transfer Function on the Material and Design Parameters of HgCdTe IR FPAs

Lee

Polovinkin

2020

IEEE Trans. Electron Devices

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A new generation of small pixel pitch/SWaP cooled infrared detectors

Cited by 3 publications

References 3 publications

Research progress on digital ROIC of infrared focal plane array detector

Research progress on digital ROIC of infrared focal plane array detector

Small pixel pitch MCT P on N MWIR photodiodes at DEFIR: towards 7.5um and beyond with very high image quality

Dependence of the Modulation Transfer Function on the Material and Design Parameters of HgCdTe IR FPAs

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