A new generation of power unipolar devices: the concept of the FLoating islands MOS transistor (FLIMOST)

Cézac, N.; Morancho, Frédéric; Rossel, P.; Tranduc, H.; Payre-Lavigne, A.

doi:10.1109/ispsd.2000.856775

Cited by 29 publications

(17 citation statements)

References 7 publications

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“…It was first introduced by N. Cezac, who applied it to the PIN diode and NPT IGBT(Vertical Diffused MOS) [5]. As shown in Fig.…”

Section: Theoretical Analysismentioning

confidence: 99%

A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance

Jung¹,

Cho²,

Kang³

et al. 2012

Journal of Electrical Engineering and Technology

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-Insulated Gate Bipolar Transistors(IGBTs) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the onstate voltage drop should be lowered and the switching time should be shortened. However, there is trade-off between the breakdown voltage and the on-state voltage drop. The FLoatingIsland(FLI) structure can lower the on-state voltage drop without reducing breakdown voltage. In this paper, The FLI IGBT shows an on-state voltage drop that is 22.5% lower than the conventional IGBT, even though the breakdown voltages of each IGBT are almost identical.

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“…It was first introduced by N. Cezac, who applied it to the PIN diode and NPT IGBT(Vertical Diffused MOS) [5]. As shown in Fig.…”

Section: Theoretical Analysismentioning

confidence: 99%

A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance

Jung¹,

Cho²,

Kang³

et al. 2012

Journal of Electrical Engineering and Technology

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“…The floating island (FLI) [8][9][10][11][12] concept was proposed in order to break the silicon limit, and it is relatively easy to realise for SiC by the multiple epitaxial overgrowth process compared with super junction. Besides, the FLI in trench MOSFETs has been discussed with regard to the reduction in peak field of the drift region for silicon in 2011 [13].…”

Section: Introductionmentioning

confidence: 99%

Investigation of SiC trench MOSFET with floating islands

Song

Tang

Zhang

et al. 2016

IET Power Electronics

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The silicon carbide trench metal-oxide-semiconductor field-effect transistors (SiC UMOSFET) with P + floating island (FLI) which shields the gate oxide at the bottom of the gate trench from the high electric field during the blocking state and enhances the breakdown voltage (BV), is presented in this study using two-dimensional simulations. The effects of doping concentration, length and position of FLI on BV, electric field distribution and specific on-resistance (R on,sp) are studied, thereby providing particularly useful guidelines for the design of this new type of device when considering the breakdown of the gate oxide layer. For the suitable device design, the results indicate that BV and Baliga figure of merit are, respectively, increased by 150 and 439% compared with a conventional SiC UMOSFET. At the same time, the SiC FLI UMOSFET has smaller gate-drain capacitance and better switching performance compared with the conventional UMOSFET on the condition of the same drift layer parameters. FLI introduced have almost no influence on the recovery characteristics of body diode.

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“…Recently, several MOSFET configurations have been proposed to improve the compromise between specific on-resistance and breakdown voltage: P-floating islands devices (Ce´zac, Morancho, Rossel, Tranduc and Peyre-Lavigne 2000;Chen, Wang, and Sin 2000;Saitoh, Omura, Tokano, Ogura, and Ohashi 2002) and superjunction devices (Fujihira 1997).…”

Section: Introductionmentioning

confidence: 99%

“…The floating islands metal-oxide semiconductor field-effect transistor (FLIMOS-FET) was proposed by Ce´zac et al (2000) to reduce the specific on-resistance by inserting floating islands in the lightly doped region (Figure 2). The specific onresistance is improved by the increase in the doping level of the drift region compared with a conventional VDMOSFET, with the same breakdown voltage.…”

Section: Introductionmentioning

confidence: 99%

Breakdown voltage and on-resistance considerations in the floating islands metal-oxide semiconductor field-effect transistor

Galadi

Morancho

Hassani

2010

International Journal of Electronics

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This article presents an analytical study of a new power metal-oxide semiconductor field-effect transistor (MOSFET) structure, called 'FLoating Islands MOSFET (FLIMOSFET)', which presents a better trade-off between breakdown voltage and on-resistance compared with conventional VDMOSFETs. The improvement of this trade-off was obtained by inserting one (or several) floating island(s) in the lowly doped epitaxial layer. An analytical model was developed, based on the physical structure of the FLIMOSFET, in order to show the positive effect of the P-floating island on the 'on-resistance/breakdown voltage' compromise.

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A new generation of power unipolar devices: the concept of the FLoating islands MOS transistor (FLIMOST)

Cited by 29 publications

References 7 publications

A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance

A Study on the Design and Electrical Characteristics Enhancement of the Floating Island IGBT with Low On-Resistance

Investigation of SiC trench MOSFET with floating islands

Breakdown voltage and on-resistance considerations in the floating islands metal-oxide semiconductor field-effect transistor

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