2021 IEEE Sensors 2021
DOI: 10.1109/sensors47087.2021.9639830
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A New Foundry-Based Open-Gate Junction Field-Effect Transistor (OG-JFET) as Electronic Sensing Platform (ESP) for Life Science Applications

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Cited by 3 publications
(3 citation statements)
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“…[ 75 ] for NO 2 detection using a similar JFET structure. However, the charge density was determined using the simulation modeling of pH equivalent surface charge we introduced in our previous work [ 72 ]. Same as the experiment and multiphysics simulation, the mathematical model shows current enhancement with an increase in pH ( Figure 15 ).…”
Section: Resultsmentioning
confidence: 99%
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“…[ 75 ] for NO 2 detection using a similar JFET structure. However, the charge density was determined using the simulation modeling of pH equivalent surface charge we introduced in our previous work [ 72 ]. Same as the experiment and multiphysics simulation, the mathematical model shows current enhancement with an increase in pH ( Figure 15 ).…”
Section: Resultsmentioning
confidence: 99%
“…The current sensing platform is similar to the well-established JFET, with the subtle difference that the top gate of a JFET is removed to open the space for introducing a solution. Physically, the structure is based on a p-type JFET without the top n-type gate, as we reported in our previous works [ 70 , 71 , 72 ]. Therefore, the structure only has a back gate that can control the conduction channel.…”
Section: Electronic Sensormentioning
confidence: 99%
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