Abstract:dry etch and Electron beam lithography were used to directly integrate plasmonic color filters onto the top surface of a complementary metal oxide semiconductor (CMOS. The filters have a spectral range of 3.5 × 8 microns. After measuring the photocurrent, it was found that the 150×150-pixel plasmonic CIS was sensitive to all colors in the visible spectrum. The filters were made using a straightforward method that only required a single lithographic procedure. This is in contrast to the standard multi-stage pro… Show more
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