A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions

Pilotto, A.; Palestri, Pierpaolo; Selmi, L.; Antonelli, M.; Arfelli, Fulvia; Biasiol, G.; Cautero, G.; Driussi, F.; Menk, R.H.; Steinhartova, T.

doi:10.1109/ted.2019.2900743

Cited by 3 publications

(3 citation statements)

References 19 publications

(43 reference statements)

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“…When P e tends to 1 (we double the electrons after each conduction band discontinuity), the excess noise factor tends to 1. A generalization of Eqs 18, 19 for a structure with non-uniform steps has been proposed in [30].…”

Section: Gain and Noise In Staircase Apdsmentioning

confidence: 99%

“…When dealing with X-rays, instead, the fact that one photon generates many e-h pairs can be interpreted as an additional multiplication step at the beginning of the structure having gain N = E ph /E ehp and excess noise factor F p = 1 + f/N. By employing the formula proposed in [30] to combine the multiplication steps, one find that for X-rays the current noise has a Power Spectral Density:…”

Section: Improved Random-path-length Algorithm For Time Response To S...mentioning

confidence: 99%

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Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection

et al. 2022

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We report on a suite of modeling approaches for the optimization of Avalanche Photodiodes for X-rays detection. Gain and excess noise are computed efficiently using a non-local/history dependent model that has been validated against full-band Monte Carlo simulations. The (stochastic) response of the detector to photon pulses is computed using an improved Random-Path-Length algorithm. As case studies, we consider diodes consisting of AlGaAs/GaAs multi-layers with separated absorption and multiplication regions. A superlattice creating a staircase conduction band structure is employed in the multiplication region to keep the multiplication noise low. Gain and excess noise have been measured in devices fabricated with such structure and successfully compared with the developed models.

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Section: Gain and Noise In Staircase Apdsmentioning

confidence: 99%

Section: Improved Random-path-length Algorithm For Time Response To S...mentioning

confidence: 99%

Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection

et al. 2022

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“…The capability of these models to represent the spatial distribution of ionisation path length generated by the analytical-band MC model [1] is presented for only one PDF of electron ionisation path length in GaAs at the electric field of 960 kVcm −1 . Recently, this simple RPL model has been improved and demonstrated capable of modelling avalanche characteristics in separate absorption and multiplication avalanche photodiodes (SAM-APDs) [12] and staircase APDs [13,14]. This improved RPL is based on a nonlocal historydependent model [15,16], where the electron and hole ionisation coefficients at a given position in the multiplication region do not depend on the local electric field, but on the whole electric field profile experienced by the carrier [17].…”

Section: Introductionmentioning

confidence: 99%

Weibull-Fréchet random path length model for avalanche gain and noise in photodiodes

Ong¹,

Tan²,

Choo³

et al. 2021

J. Phys. D: Appl. Phys.

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A four-parameter Weibull-Fréchet (WF) distribution function has been introduced in the random path length (RPL) model for nonlocal modelling of soft-threshold ionisation in semiconductors. The WF function has been demonstrated to be capable of reproducing the realistic probability distribution function (PDF) of electron and hole ionisation path lengths extracted from full band Monte Carlo (FBMC) transport simulations of bulk GaAs. The electron-initiated multiplication in GaAs avalanche photodiodes (APDs) calculated by the WF-RPL model is in excellent agreement with the results from FBMC. The predicted excess noise factor is closer to that of FBMC as compared to the hard threshold RPL model. The advantage of this improved RPL model as a tool for predicting the PDF of electron and hole ionisation path lengths in AlAs0.56Sb0.44 from the experimentally measured avalanche gain and noise has been analysed. The electron ionisation path length PDF of AlAs0.56Sb0.44 has a unique feature of two decay rates with a narrow full width at half maximum and a long tail. The extremely low hole ionisation coefficient in AlAs0.56Sb0.44 is found with a PDF of ionisation path length spanning over 50 µm at an electric field of 600 kVcm−1, supporting the very low hole feedback ionisation in AlAs0.56Sb0.44 APDs. The combination of the detailed and peaked electron’s ionisation path length PDF and of the broad hole’s ionisation path length PDF is responsible for the extremely low avalanche noise in the 1.55 µm thick AlAs0.56Sb0.44 APDs.

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Near-unity excess noise factor of staircase avalanche photodiodes

Dadey,

Jones,

March

et al. 2023

Optica

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If a receiver system is circuit-noise limited, avalanche photodiodes can be beneficial, as their internal gain mechanism can lead to a higher system signal-to-noise ratio. However, the extent of this benefit is intrinsically limited by the detectors’ excess noise factor. The higher the factor, the lower the overall signal-to-noise ratio. The staircase avalanche photodiode proposed by Federico Capasso was designed to be a solid-state replacement for a photomultiplier tube in which discrete and deterministic gain would lead to a unity excess noise factor. The predicted gains for a staircase avalanche photodiode have recently been confirmed for one-, two-, and three-step structures [Nat. Photonics 15, 468 (2021)NPAHBY1749-488510.1038/s41566-021-00814-x]. This paper presents measurements of the excess noise factor of two- and three-step staircase avalanche photodiodes. At an average gain of 4.01 and 7.24, the two- and three-step staircase avalanche photodiodes have an average excess noise factor of 1.02 and 1.08, respectively.

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A New Expression for the Gain-Noise Relation of Single-Carrier Avalanche Photodiodes With Arbitrary Staircase Multiplication Regions

Cited by 3 publications

References 19 publications

Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection

Modeling Approaches for Gain, Noise and Time Response of Avalanche Photodiodes for X-Rays Detection

Weibull-Fréchet random path length model for avalanche gain and noise in photodiodes

Near-unity excess noise factor of staircase avalanche photodiodes

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