A new experimental method to extract EEPROM tunnel oxide trap density from threshold voltage distributions

Plantier, J.; Aziza, Hassen; Portal, Jean‐Michel; Reliaud, C.; Régnier, A.

doi:10.1016/j.jnoncrysol.2010.11.010

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B Oxrram Model1

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2013

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“…Variability is introduced through two model card parameters β RedOx and β HRS . This simulation methodology is extensively used in the non-volatile memory field to evaluate marginal cells populations [12][13][14][15] …”

Section: B Oxrram Modelmentioning

confidence: 99%

Single-ended sense amplifier robustness evaluation for OxRRAM technology

Aziza¹,

Bocquet²,

Moreau³

et al. 2013

2013 8th IEEE Design and Test Symposium

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In this paper, impact of OxRRAM cell variability on circuit performances is analyzed quantitatively at a circuit level. A single-ended sense amplifier architecture is evaluated against memory cell variability. This study enables enhancing OxRRAM yield as well as reducing cell consumption during a read operation without compromising reliability. Due to the stochastic nature of the switching process in OxRRAMs, leading to large variability, all simulations are Monte Carlo oriented.

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Section: B Oxrram Modelmentioning

confidence: 99%