2011
DOI: 10.1109/led.2011.2144561
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A New Edge Termination Technique for High-Voltage Devices in 4H-SiC–Multiple-Floating-Zone Junction Termination Extension

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Cited by 117 publications
(39 citation statements)
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“…It will also contain support information, including sponsor and financial support acknowledgment. field plates [2], or single or multiple zone junction termination extension (JTE) [3], [4]. In recent years, several advanced edge terminations have been proposed that were intended to increase the robustness of the edge terminations against design and process variations, and to reduce the device area and process complexity.…”
Section: Introductionmentioning
confidence: 99%
“…It will also contain support information, including sponsor and financial support acknowledgment. field plates [2], or single or multiple zone junction termination extension (JTE) [3], [4]. In recent years, several advanced edge terminations have been proposed that were intended to increase the robustness of the edge terminations against design and process variations, and to reduce the device area and process complexity.…”
Section: Introductionmentioning
confidence: 99%
“…It is especially important when it comes to designing high voltage devices on SiC because the material cost is much more expensive than the conventional silicon wafer. The most widely used efficient edge termination techniques for SiC devices are floating field rings (FFRs), junction termination extension (JTE) [1], [2], and multi-step etched JTE [3], [4]. When using FFRs, a narrow definition of the space between rings, and tight control of defects are required in order to attain the designed breakdown voltage.…”
Section: Introductionmentioning
confidence: 99%
“…4H-SiC is indisputably the most efficient semiconductor material when used for ultra-high voltage (>10kV) devices due to the high electric field, and substrate material maturity [1][2][3]. Smaller number of ultra-high voltage SiC IGBTs, and GTO thyristors connected in series with diodes can replace large number of Si power devices in AC applications such as solid-state circuit breakers [4].…”
Section: Introductionmentioning
confidence: 99%
“…One can design the forward blocking edge termination using well-known structures such as floating field rings (FFR), or junction termination extension (JTE). For the simplicity and ease of the process, single implanted multi-zone JTE structure (multiple floating zone-JTE, MFZ-JTE) is used for the forward blocking termination(see Fig.1(a)) [2]. Orthogonal positive bevel termination fabricated by dicing serves as a reverse blocking edge termination.…”
Section: Introductionmentioning
confidence: 99%