“…The ESD protection diodes are considered to be promising in advanced technology as an ESD protection device [ 6 , 7 , 8 ]. The diode-string silicon-controlled rectifier (DSSCR) with high robustness is also considered as the ESD protection device for previous technology nodes [ 10 , 11 , 12 , 13 , 14 , 15 ], but it is no longer suitable for the 7 nm technology due to its high leakage and large snapback for latch-up. ESD design for the FinFET process is still a great challenge.…”