A New dual directional SCR with high holding voltage for High Voltage ESD protection

Song, Shiyu; Du, Feibo; Hou, Fei; Song, Wenqiang; Liu, Zhiwei; Liu, Jizhi

doi:10.1109/edssc.2019.8754152

Cited by 3 publications

(1 citation statement)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The ESD protection diodes are considered to be promising in advanced technology as an ESD protection device [ 6 , 7 , 8 ]. The diode-string silicon-controlled rectifier (DSSCR) with high robustness is also considered as the ESD protection device for previous technology nodes [ 10 , 11 , 12 , 13 , 14 , 15 ], but it is no longer suitable for the 7 nm technology due to its high leakage and large snapback for latch-up. ESD design for the FinFET process is still a great challenge.…”

Section: Introductionmentioning

confidence: 99%

Silicon-Controlled Rectifier Embedded Diode for 7 nm FinFET Process Electrostatic Discharge Protection

Zhu

Dong

et al. 2022

Nanomaterials

View full text Add to dashboard Cite

A new silicon-controlled rectifier embedded diode (SCR-D) for 7 nm bulk FinFET process electrostatic discharge (ESD) protection applications is proposed. The transmission line pulse (TLP) results show that the proposed device has a low turn-on voltage of 1.77 V. Compared with conventional SCR and diode string, the proposed SCR-D has an additional conduction path constituting by two additional inherent diodes, which results in a 1.8-to-2.2-times current surge capability as compared with the simple diode string and conventional SCR with the same size. The results show that the proposed device meets the 7 nm FinFET process ESD design window and has already been applied in actual circuits.

show abstract