“…The devices can be prepared via spin‐coating to realize the manufacture of large area, flexible, lightweight, inexpensive, and renewable devices 1–3. Generally, the hole‐transporting (p‐type) and electron‐transporting (n‐type) materials are two basic components in the active layer to form a bulk heterojunction 4–8. Currently, fullerene derivatives, for example, [6, 6]‐Phenyl‐C 61 ‐butyric acid methyl ester (PCBM), are the widely used acceptor materials because these fullerene semiconductors have narrow band width in solid state, high electron mobility and high electron affinity with a lowest unoccupied molecular orbital (LUMO) level of −4.3 eV in vacuum 9.…”