A new direct band gap Si–Ge allotrope with advanced electronic and optical properties

Abstract

Direct-band silicon materials have been a sought-after material for potential applications in silicon photonics and solar cells. Accordingly, methodologies like nanostructure engineering, alloy engineering and strain engineering have been developed....

Mixed-Substituted Single-Source Precursors for Si1–xGex Thin Film Deposition

“…Such a very homogeneous atomic intermixing without segregation could be achieved with single-source precursors containing both Si and Ge in one molecule. Moreover, this single-source precursor concept should provide the best chances to enable growth of very recently proposed new polymorphs, providing access to direct bandgap Si 1−x Ge x materials differing in structure and bandgap 26 or other metastable ternary materials with peculiar physical properties based on group IV elements. 27 Single-source precursors carrying exclusively hydride ligands, such as H 3 SiGeH 3 and Ge(SiH 3 ) 4 , have been reported for the CVD of the Si 1−x ,Ge x layers, 28 but typical scrambling reactions during storage and inefficient synthesis strategies for their controlled formation are the most probable reasons why this strategy has not been further pursued.…”

“…Such a very homogeneous atomic intermixing without segregation could be achieved with single-source precursors containing both Si and Ge in one molecule. Moreover, this single-source precursor concept should provide the best chances to enable growth of very recently proposed new polymorphs, providing access to direct bandgap Si 1– x Ge x materials differing in structure and bandgap 26 or other metastable ternary materials with peculiar physical properties based on group IV elements. 27 …”