A new design of the SiC light-activated Darlington power transistor

Chen, Z. M.; Pu, Hongbin; Lu, Zhenxia; Ren, Pengfei

doi:10.1016/j.mee.2005.10.047

Cited by 7 publications

(2 citation statements)

References 7 publications

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“…The ternary alloy, SiCGe, with an appropriate composition was suggested as the light-sensitive base layer of a SiC-based light-activated Darlington transistor. [1,2] In our earlier publications, SiCGe thin films with different compositions have been grown on 6H-SiC by low-pressure chemical vapor deposition (LPCVD) successfully. [3] The growth mode and structure of the SiCGe films have been reported.…”

Section: Introductionmentioning

confidence: 99%

Defect investigations of SiCGe epilayer grown on 6H‐SiC

Chen

Yang

et al. 2011

Surface & Interface Analysis

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SiCGe/6H-SiC heterojunction is essential to the development of SiC optoelectronic devices and light-activated SiC switching devices. In this work, the ternary alloy SiCGe samples grown on 6H-SiC substrates in a conventional hot-wall chemical vapor deposition system have been studied by scanning electron microscope and transmission electron microscope. Selected area diffraction (SAED) patterns show that SiCGe thin films have a zinc-blende structure. Typical double positioning boundaries, stacking faults and microtwins in SiCGe thin films were observed and validated by SAED patterns. The growth mechanisms of these defects were investigated.

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Section: Introductionmentioning

confidence: 99%

Defect investigations of SiCGe epilayer grown on 6H‐SiC

Chen

Yang

et al. 2011

Surface & Interface Analysis

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“…This essentially limits its application for detection of visible and infrared light. A promising way to solve this problem is to adopt an SiCGe/SiC heterojunction structure, in which the ternary alloy SiCGe with appropriate composition is used as a light-absorption layer [1][2][3]. At present, the growth of the SiCGe film on SiC is comparatively less studied, only a group from the University of Delaware has published a paper on the application of SiC:Ge alloy in SiC heterostructure bipolar transistors.…”

Section: Introductionmentioning

confidence: 99%

Photoluminescence in SiCGe thin films grown on 6H-SiC

Chen

et al. 2010

Journal of Luminescence

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Structure analysis of SiCGe films grown on SiC

Chen

Lin

et al. 2008

Surface & Interface Analysis

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The island growth of SiCGe films on SiC at different temperatures has been investigated by SEM and transmission electron microscope (TEM). The island growth of SiCGe thin films depends on the processing parameter such as the growth temperature and follows the Stranski-Krastanov (SK) mode. When the growth temperature is comparatively low, the thin film has two types of islands: one is a SiGe sphere-like island of diamond-cubic structure; another is a SiCGe cascading triangular island of zinc-blende structure. As the growth temperature increases, the quantity of the sphere-like islands reduces, while that of the cascading triangular islands increases. When the growth temperature is about 1060• C, only cascading triangular islands are observed on the surface of the thin film, and the thickness of the 2D interfacial growth layer formed at the initial stage of the growth process is about 40 nm, which is twice of that grown at low temperature.

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A new design of the SiC light-activated Darlington power transistor

Cited by 7 publications

References 7 publications

Defect investigations of SiCGe epilayer grown on 6H‐SiC

Defect investigations of SiCGe epilayer grown on 6H‐SiC

Photoluminescence in SiCGe thin films grown on 6H-SiC

Structure analysis of SiCGe films grown on SiC

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