A new design for a 1280×1024 digital CMOS image sensor with enhanced sensitivity, dynamic range and FPN

Ho, Jia Chong; Chiang, Ming-Cheng; Cheng, Han-Min; Lin, Tzu Chen; Kao, Ming-Jer

doi:10.1109/vtsa.1999.786043

Cited by 3 publications

(1 citation statement)

References 3 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 2 illustrates the typical cell layout of an 8T GSI pixel. Since the global shutter pixel needs to store the signal inside the pixel, the pixel cell size of the high-performing voltage domain is usually more than five microns [10], resulting in a decrease of the resolution of the image sensor in the unit area. Moreover, the high-performance voltage-domain global pixel unit needs to integrate far more transistors than the conventional 4T rolling shutter pixel unit, resulting in a decline in the performance of the pixel unit.…”

Section: Introductionmentioning

confidence: 99%

A Novel Low Dark Current 9T Global Shutter Pixel with Merged Active Area

Zhu

Chen

et al. 2023

Electronics

View full text Add to dashboard Cite

There is an increasing demand for high-performance global shutter pixels for CMOS image sensor (CIS) in the high-end imaging field. The existing global pixels have disadvantages, such as low sensitivity, high dark current, and large pixel area. In the present work, we developed a novel 9T global shutter CIS pixel with a much smaller pixel pitch of 2.8 μm. To our knowledge, it is the most miniature reported 9T global shutter CIS pixel. The developed 9T global shutter CIS pixel shows an excellent low dark current by the strategy of merging active area, which is 38 e−/s. Moreover, the cross-talk, sensitivity, read noise, dynamic range and full well capacity show performance. The current strategy is expected to be helpful in further improving the performance of other kinds of CIS pixels.

show abstract

Section: Introductionmentioning

confidence: 99%