A New de Electroluminescent Device Using Sintered ZnS:Mn Phosphor-Ceramics

Abstract

A new de electroluminescent device using sintered ZnS:Mn phosphor ceramics has been proposed. The maximum brightness and luminous efficiency obtained were 7200 nt and 0.56 lm/W, respectively. These factors were strongly dependent on the copper-coating conditions of the ceramics. The applied voltage at onset of light emission can be controtted from 15 V to 200 V by copper-coating conditions. It was found that the excitation process was due to the hot electron impact of Mn impurity.

An Electroluminescent Device Using Sintered Manganese-Doped Zinc Sulfide Phosphor Ceramics

“…4, whereas the waveform of L changed with theincrease in V. It should be noted that a very large dc current flowed into the device when ZnO:AI electrode was negatively biased. The dc current flowing at higher applied voltages regardless of the polarity may be related to V-I characteristics of the formed PCEL devices [1]. Thus, these results suggest that the V-I characteristics of PCEL devices is dominated by the ZnS/Cu 2 S heterojunction rather than the bulk effect [6].…”

“…Recently, we have proposed new electroluminescent (EL) devices using a sintered manganese-doped zinc sulfide phosphor ceramic which acts not only as the active layer but also as the substrate [1]. The initial research clarified that the phosphor ceramic electroluminescent (PCEL) devices had advantages in regard to low cost, low dc voltage driving, breakdown-free operation and high legibility [1,2].…”

“…The initial research clarified that the phosphor ceramic electroluminescent (PCEL) devices had advantages in regard to low cost, low dc voltage driving, breakdown-free operation and high legibility [1,2]. However, it has not been satisfactorily considered to optimize preparation conditions of the PCEL devices.…”

Electrical characteristics of palladium Schottky contacts to hydrogen peroxide treated hydrothermally grown ZnO

“…This is mostly due to the difficulties in achieving stable SCs that are fundamental for studying defects in semiconductors by junction spectroscopy techniques like admittance spectroscopy (AS) and deep level transient spectroscopy (DLT S). Below some of the main established results related to defects and impurities, relevant to this Group III elements on Zn site, Al Zn , Ga Zn and In Zn act as donors to ZnO resulting in n-type material with high conductivity and transparency in the visible wavelength range [28,29,30]. Their fingerprints in the band edge photoluminescence spectra have recently been attributed [2], while there is still some dispute on the assignment of the corresponding energy level position obtained from T DH measurements [1].…”

Fabrication of Dispersion-type Inorganic Electroluminescence Panel Using Planar Electrodes

“…Inorganic EL can be classified as one of two structure types: thin-film type [2][3][4][5][6][7][8][9][10][11][12][13] and dispersion type [14][15][16][17][18][19][20][21][22][23]. In dispersion-type EL, inorganic phosphor powder is dispersed into a dielectric binder and light is emitted when an electric field is applied.…”