A new concept silicon homojunction infrared sensor

Terahertz Detection Devices

“…Since then, several different types of internal photoemission detectors have been demonstrated (Shepherd, 1992;Perera et al, 1995;Perera, 2001). Among the most important types are metal-semiconductor Schottky barrier IR detectors, such as PtSi/Si detectors (Kosonocky, 1992) operating in 3-5 mm; semiconductor heterojunction IR detectors, such as Ge x Si 1Àx /Si detectors [Lin and Maserjian (1990), Tsaur et al, (1991)] developed for 8-14 mm or even longer wavelengths; and a degenerate Si homojunction detector [Tohyama et al (1991)], which has a response in the 1-7 mm range. The absorber/photoemitter electrode is a metal, a metal silicide, or a degenerate semiconductor in the Schottky barrier, silicide, and degenerate homojunction detectors, respectively.…”

“…The barrier height depends on the doping concentration and the applied voltage, giving rise to an electrically tunable f t . This type of device was first demonstrated by Tohyama et al (1991) using a structure composed of a degenerate n þþ hot carrier emitter, a depleted barrier layer (lightly doped p, n, or i), and a lightly doped n-type hot carrier collector. As the bias voltage is increased, the barrier height is reduced, the spectral response shifts toward lower frequency, and the signal increases at a given frequency.…”

Homo- and Heterojunction Interfacial Workfunction Internal Photo-Emission Detectors from UV to IR

“…Since then, several different types of internal photoemission detectors have been demonstrated (Perera, 2001;Perera et al, 1995;Shepherd, 1992). Among them are metalsemiconductor Schottky barrier IR detectors, such as PtSi/Si detectors (Kosonocky, 1992) operating in 3-5 µm range; semiconductor heterojunction IR detectors, Ge x Si 1−x /Si detectors (Lin and Maserjian, 1990;Tsaur et al, 1991) developed for 8-14 µm or even longer wavelengths; and a degenerate Si homojunction detector (Tohyama et al, 1991), which has a response in the 1-7 µm range. The absorber and photoemitter can be a metal, a metal silicide, or a degenerate semiconductor in the Schottky barrier, silicide, and degenerate homojunction detectors, respectively.…”

Study on the long wavelength SiGe/Si heterojunction internal photoemission infrared photodetectors

“…Schottky barrier [11], metal(silicide)-semiconductor-metal(silicide) [12,13], homojunction IPs [14,15], and especially quantum well structures [16, and references therein] have been the subject of these studies in recent years. In this paper, we present Si 1Àx Ge x /Si HIPs whose cut-off wavelengths can be varied by the externally applied bias and a qualitative model by identifying the photocurrent generation mechanisms in the structure to explain the experimental results.…”

“…Among infrared detector studies, multispectral detection and/or tunable cut-off wavelength properties have been paid special attention [10][11][12][13][14][15][16]. Schottky barrier [11], metal(silicide)-semiconductor-metal(silicide) [12,13], homojunction IPs [14,15], and especially quantum well structures [16, and references therein] have been the subject of these studies in recent years.…”