A new compressively strained-layer <i>p</i>-type InGaAs/AlGaAs/GaAs step bound to miniband quantum well infrared photodetector with a detection peak at 10.4 μm

Chu, J.; Li, Sheng S.; Ho, P.

doi:10.1063/1.117384

Cited by 5 publications

(2 citation statements)

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“…• the development and commercialisation of large area arrays [75,74] • the invesigation of different materials [27,211,63,97,87] for making inter subband detectors,…”

Section: Historical Perspectivementioning

confidence: 99%

III-V Detectors

2010

Infrared Detectors

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The quantum-well infrared photodetector (QWIP) is a relatively new type of semiconductor detector which has a clearly defined spectral response. This study shows that the infrared spectral response of a QWIP can be fine tuned. We have fabricated AlGaAs-GaAs QWIPs, and used proton implantation and rapid thermal annealing to tune the infrared spectral response of these QWIPs by up to 1.4 pm. Multiple proton implants at energies between 200 and 400 keV were used to create homogeneous quantum-well intermixing throughout the de vices' multiple-quantum-well structure. Photoluminescence and photoresponse measurements were used to study the effect of proton implantation on QWIPs for a series of doses up to 3.5 x 1015 protons cm-2. By using a mask during im plantation, a method of constructing a colour sensitive array is proposed. The dynamics in quantum-wells with similar properties to QWIPs were investigated. The capture of electron-hole pairs into a quantum-well increased after the sam ple was intermixed. Thus intermixed QWIPs may exhibit improved electrical response bandwidths. The dynamic properties of a sawtooth superlattice (<5-doped nipt) were ex amined by photoluminescence spectroscopic techniques. The dynamic properties of the sawtooth superlattice were probed using time resolved photoluminescence and carrier lifetime measurements. £-doped sawtooth superlattices are shown to have a tunable bandgap as well as an intensity tunable carrier lifetime. These properties may prove useful in the development of a wavelength tunable inter subband nipi infrared detector. Thermal quenching of photoluminescence from GaAs-InGaAs and AlGaAs-GaAs quantum-wells has been shown to be dependent on the intensity of excita tion. We believe this intensity dependence is related to the presence of saturable non-radiative recombination paths via hetero-interface defects. Additionally, an increase in photoluminescence intensity as a function of temperature has been observed at low temperatures. These results are linked to the presence of sat urable defect states, possibly surface states. Firstly I would like to thank my supervisor, Professor Mike Gal for everything he has taught me during my studies. His enthusiasm, knowledge and advice have helped maintain the direction of this thesis, while the responsibility and freedom he has given me has allowed me to follow some of my own odd ideas. Dr C. Jagadish has been a constant source of encouragement and useful collaboration, both with his group at the Australian National University and with the Chinese Academy of Sciences. Without the expertise, time and facilities of his group this project would not have been possible. Dr. Lap van Dao has constructed the photoluminescence up-conversion sys tem in our laboratory. His skill in lasers and optics is exceptional. Thanks to Lap for many discussions on carrier dynamics in quantum-wells. Sincere thanks to Dr. Nancy Lumpkin for spending so many hours teaching me semiconductor device fabrication and for sharing her excellent methods with me. The fabri...

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“…• the development and commercialisation of large area arrays [75,74] • the invesigation of different materials [27,211,63,97,87] for making inter subband detectors,…”

Section: Historical Perspectivementioning

confidence: 99%

III-V Detectors

2010

Infrared Detectors

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“…These peculiar findings at 2D interfaces have provided alternative and intriguing avenues to explore innovative applications in photodetection. Some salient examples include the high-performance ultraviolet photodetector based on AlGaN/GaN, [14] visible photodetector based on MgZnO/ZnO, [15] longwavelength infrared photodetector based on AlGaAs/GaAs, [16][17][18] etc. Although these 2DEG systems have been exploited in detecting photons with different energies, the reports of 2DEG in detecting MIR photons are rare.…”

Section: Introductionmentioning

confidence: 99%

Applying 2DEG in High‐Performance Mid‐Infrared Photodetection

Wang

Shen

et al. 2023

Advanced Optical Materials

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High‐speed and highly sensitive infrared photodetectors are regarded as one of the most essential components in modern photonic devices and technology because of constantly emerging application scenarios. In this paper, an ultrafast and extremely low noise mid‐infrared (MIR) photodetector is reported at both room and cryogenic temperatures by leveraging the high‐mobility 2D electron gas (2DEG) at the polar CdTe/PbTe heterostructure interface. The detector simultaneously exhibits a peak detectivity of ≈4.2 × 1011 Jones with rapid response in the order of 10 ns, which is substantially superior to the state‐of‐the‐art 2DEG MIR detectors made of 2D layered materials. The ultrafast response with extremely low noise of the 2DEG photodetector is attributed to the unique band alignment at the interface. The practical infrared imaging application is further showcased using the 2DEG MIR detector by revealing the fine features of a MIR radiation target. This work highlights the promising prospect of utilizing the unique 2DEG interface in the field of high‐speed and highly sensitive MIR detection.

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Quantum well infrared photodetectors

Tidrow

2000

Handbook of Nanostructured Materials and Nanotechnology

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A new compressively strained-layer p-type InGaAs/AlGaAs/GaAs step bound to miniband quantum well infrared photodetector with a detection peak at 10.4 μm

Cited by 5 publications

References 1 publication

III-V Detectors

III-V Detectors

Applying 2DEG in High‐Performance Mid‐Infrared Photodetection

Quantum well infrared photodetectors

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