A new class of active impedance source inverter with low voltage stress on semiconductors

Abstract

SummaryIn this paper, a new group of active impedance source inverters, along with a suitable control method based on the pulse width modulation (PWM) technique, is presented. The purpose of these inverters is to reduce the voltage stress on capacitors, diodes, and switches compared to other topologies. Using the proposed control method to produce the gate pulse of the switches, all operating modes of one of the proposed inverters, in two different operations (synchrony and asynchrony), to calculate boost factor and critical inductance in the boundary condition, are analyzed. Furthermore, all equations of voltage and current of components to design the suitable amounts of capacitors and inductors are calculated. Then, the comparative analysis from different points of view, such as boost factor, total voltage blocked by diodes and switches, and voltage stresses on capacitors between the proposed topology and conventional structures to examine the advantages and disadvantages, is done. Also, the losses and efficiency of the proposed topology at different loads are fully given. Finally, a prototype of the proposed topology is designed, and its experimental results are provided to check the performance and correctness of the obtained equations in different operating modes.