A new circuit-breaker integrated device for protection applications

Abstract

breaking operation, the structure reset will occur in the ZVS A b s t r a c t :In this paper, a new circuit-breaker mode, when the voltage across its terminals is set to zero. integrated device for low power electronic c i r c u i t s protection, based on the functional i n t e g r a t i o n mode, is investigated. The influence of the p h y s i c a l and technological parameters of this device u p o n the main electrical characteristics has b e e n analyzed using analytical models and ATLAS software tool. The first experimental results are presented. V 0 VOVf V

Évolution de l'intégration en électronique de puissance

“…Afin de diminuer ce courant de fuite, une nouvelle fonction intégrée "micro-disjoncteur" (Fig. 8a) a été déve-loppée [19] ; elle permet de supprimer le courant lié au MOS à canal préformé pour des valeurs de tensions anode-cathode élevées. L'intégration de cette fonction micro-disjoncteur au sein de la structure thyristor dual se traduit uniquement par l'adjonction d'une cellule PMOS à enrichissement (Fig.…”

Experimental Verification of a Self-Triggered Solid-State Circuit Breaker Based on a SiC BIFET

“…It was shown that the silicon carbide (SiC) Bipolar-Injection Field-Effect-Transistor (BIFET) is a promising switch for such an application in the future [2]. Since the BIFET is a normally-on device, its integration in a Dual Thyristor circuit, typically made up of a series combination of two normally-on MOSFETs [3] or JFETs [4], is an auspicious concept for such an application. This combination results into a regenerative self-triggering fuse with high current and voltage capabilities and furthermore, guarantes safe and reliable functionality without any additional power supplies or control units.…”

Sensor de temperatura na tecnologia CMOS para proteção de CIs: arquitetura e aplicações.

“…Para minimizar esses ataques foram desenvolvidos circuitos de proteção como: a implantação de uma resistência dinâmica de diodos para redução da tensão de ruptura (MAES; SIX; SANSEN, 1981), análise de um dispositivo integrado de disjuntor para proteção de circuitos eletrônicos de baixa potência (LAUR et al, 1999), driver de porta para transistor bipolar de gate isolado (TBGI), para a ativação de dois níveis para reduzir a corrente de pico ao ligar o dispositivo, e a desativação de dois níveis para limitar a sobretensão quando o dispositivo está desligado (DULAU et al, 2006).…”