A new Bulk Built-In Current Sensing circuit for single-event transient detection

Zhang, Zhichao; Wang, Tao; Chen, Li; Yang, Jinsheng

doi:10.1109/ccece.2010.5575124

Cited by 24 publications

(13 citation statements)

References 6 publications

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“…This result was unexpected because its relevance was previously ascertained on simulation basis [2,3].…”

Section: Experimental Testing Of the Nmos-and Pmos-bivsmentioning

confidence: 61%

“…In the following subsections we review the electrical phenomenon underlying SEEs and the principles of their detection by using BBICS. We also describe the architecture of the NMOS-BBICS designed by Zhang et al [2] and the weakness revealed during its experimental testing with a laser [3].…”

Section: State-of-the-artmentioning

confidence: 98%

“…Among various BBICS architecture proposals [4,5], only one [2] was experimentally tested [3]. The authors designed both NMOS-and PMOS-BVIS to monitor NMOS and PMOS.…”

Section: Zhang Et Al Bbics Architecturementioning

confidence: 99%

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Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS

Dutertre¹,

Bastos

Potin³

et al. 2014

Microelectronics Reliability

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International audienceBulk Built-In Current Sensors (bbicss) were introduced to detect the anomalous transient currents induced in the bulk of integrated circuits when hit by ionizing particles. To date, the experimental testing of only one bbics architecture was reported in the scientific bibliography. It reports an unexpected weakness in its ability to monitor nmos transistors. Based on experimental measures, we propose an explanation of this weakness and also the use of triple-well cmos to offset it. Further, we introduce a new bbics architecture well suited for triple-well that offers high detection sensitivity and low area overhead

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“…This result was unexpected because its relevance was previously ascertained on simulation basis [2,3].…”

Section: Experimental Testing Of the Nmos-and Pmos-bivsmentioning

confidence: 61%

Section: State-of-the-artmentioning

confidence: 98%

See 1 more Smart Citation

Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS

Dutertre¹,

Bastos

Potin³

et al. 2014

Microelectronics Reliability

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“…Moreover, BBICS approach is much more efficient for dealing with transient faults of long duration and multiple faults. Nevertheless, the negative issue of existing BBICS is the elevated power consumption to provide high detection sensitivity in ultra-deep submicron technologies [5,6,16]. …”

Section: Built-in Current Sensors Detecting Transient Faultsmentioning

confidence: 99%

Novel transient-fault detection circuit featuring enhanced bulk built-in current sensor with low-power sleep-mode

Bastos

Torres

Natale

et al. 2012

Microelectronics Reliability

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a b s t r a c tThis work presents a novel circuit for detecting transient faults in combinational and sequential logic. The detection mechanism features a built-in current sensor connected to the bulks of the monitored logic. The proposed circuit was optimized in terms of power consumption and enhanced with low-power sleepmode. In addition, a calibration method for bulk built-in current sensors is presented. Overhead results indicate an increase of only 15% in power consumption which represents an improvement of factor 7 compared to similar existing sensors.Crown

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“…Some circuits have been proposed [2,3,4,5,6] in which the bulk current flows through a permanently on transistor, acting as a sensing resistor. The voltage drop on that transistor is proportional to the bulk current and is negligible at normal circuit operation.…”

Section: Introductionmentioning

confidence: 99%

A Bulk Built-in Current Sensor for SET detection with dynamic memory cell

Simionovski

Wirth

2012

2012 IEEE 3rd Latin American Symposium on Circuits and Systems (LASCAS)

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A new Bulk Built-In Current Sensing circuit for single-event transient detection

Cited by 24 publications

References 6 publications

Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS

Improving the ability of Bulk Built-In Current Sensors to detect Single Event Effects by using triple-well CMOS

Novel transient-fault detection circuit featuring enhanced bulk built-in current sensor with low-power sleep-mode

A Bulk Built-in Current Sensor for SET detection with dynamic memory cell

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