A new automatic triple-crystal X-ray diffractometer for the precision measurement of intensity distribution of Bragg diffraction and Huang scattering

Pick, Martin; Bickmann, K.; Pofahl, E.; Zwoll, K.; Wenzl, H.

doi:10.1107/s0021889877013958

Cited by 21 publications

(5 citation statements)

References 11 publications

(12 reference statements)

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“…Two peaks due to Ka I and Ko~ 2 components of the characteristic Ka line are well resolved owing to dispersion caused by different lattice spacings of the diffracting planes of the monochromator and the specimen crystals. The observed angular separation matches the theoretically expected value derived on this basis (Pick, Bickmann, Pofahl, Zwoll & Wenzl, 1977). Each of the peaks is quite sharp with a half-width of ,~11".…”

Section: Effect Of Film Deposition and Subsequent Annealing On Crystasupporting

confidence: 75%

Study of Biaxial Stress Induced by Cosputtered Thin Molybdenum Silicide Films in Silicon Single-Crystal Substrates

Lal¹,

Mitra²,

Srinivas³

1996

J Appl Cryst

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Bending of 25 mm-diameter (100) silicon wafers produced by 100 nm-thick cosputtered molybdenum-silicon films has been investigated just after deposition, after rapid thermal annealing and after etching of the deposits. Values of biaxial stress in the films were determined by the use of a widely used relation. The Mo'Si ratio in the as-deposited films was 89"11. Radii of curvature of substrates were measured by a double-crystal X-ray diffractometer. Blank wafers with three widely different radii of curvature (33, 62 and 250 m) were chosen as specimens and their curvatures were taken into account in the determination of the value of biaxial stress in wafers with deposits. All the wafers were convex when viewed from the polished surface side on which the films were deposited. Values of a for wafers with as-deposited films were in the range 3 x l08 to 14 x 108Nm -2 (tensile). Wafers with higher initial bending showed higher values of stress. Deposition led to degradation of perfection, as revealed by broadening of the diffraction curves and the contrast in the topographs. Rapid thermal annealing at 1273 and 1373 K (3-4 min) led to formation of the MoSi2 phase and to a notable relaxation of stress. The values of cr were in the range 1 x 10 7 to ,,~6 x 108N m -2 (tensile). The value of the stress was lowest for the blank wafer with smallest bending. Annealing also improved the degree of crystalline perfection of the silicon. Experiments performed after etching of the annealed specimens showed no significant change in the radii of curvature.

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Section: Effect Of Film Deposition and Subsequent Annealing On Crystasupporting

confidence: 75%

Study of Biaxial Stress Induced by Cosputtered Thin Molybdenum Silicide Films in Silicon Single-Crystal Substrates

Lal¹,

Mitra²,

Srinivas³

1996

J Appl Cryst

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“…Appropriate rotations of the sample and analyzer crystal allow undistorted and detailed maps to be recorded of reciprocal space in two or three dimensions and the effects arising from mosaicity to be deconvoluted from those due to other effects like planar defects and/or strain. The technique of RSM using the tripleaxis diffractometry and conventional X-rays has long been known (Pick et al, 1977). However, RSM more recently became a very powerful tool for the assessment of crystal perfection and investigations of structural inhomogeneities by the use of medium-or high-energy synchrotron X-rays.…”

Section: Assessment Of Crystal Quality and Reciprocal-space Mappingmentioning

confidence: 99%

Structure of Ce₂RhIn₈: an example of complementary use of high-resolution neutron powder diffraction and reciprocal-space mapping to study complex materials

Moshopoulou¹,

Ibberson²,

Sarrao³

et al. 2006

Acta Crystallogr B Struct Sci

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The room-temperature crystal structure of the heavy fermion antiferromagnet Ce2RhIn8, dicerium rhodium octaindide, has been studied by a combination of high-resolution synchrotron X-ray reciprocal-space mapping of single crystals and high-resolution time-of-flight neutron powder diffraction. The structure is disordered, exhibiting a complex interplay of non-periodic, partially correlated planar defects, coexistence and segregation of polytypic phases (induced by periodic planar ;defects'), mosaicity (i.e. domain misalignment) and non-uniform strain. These effects evolve as a function of temperature in a complicated way, but they remain down to low temperatures. The room-temperature diffraction data are best represented by a complex mixture of two polytypic phases, which are affected by non-periodic, partially correlated planar defects, differ slightly in their tetragonal structures, and exhibit different mosaicities and strain values. Therefore, Ce2RhIn8 approaches the paracrystalline state, rather than the classic crystalline state and thus several of the concepts of conventional single-crystal crystallography are inapplicable. The structural results are discussed in the context of the role of disorder in the heavy-fermion state and in the interplay between superconductivity and magnetism.

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“…The construction and testing of a simple double-crystal diffractometer has been described by Daenhardt (39), while Russian workers have reported on the construction of a 3-crystal device (87). The development of a computer controlled triple-crystal x-ray diffractometer by Pick et al (126) is clearly the most significant work reported in this field during the past two years. This device is able to automatically make intensity measurements in any direction in reciprocal space in the diffracting plane with step sizes down to 0.01 inch of arc.…”

Section: Instrumentationmentioning

confidence: 99%

X-ray diffraction

Pfluger¹

1978

Anal. Chem.

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A new automatic triple-crystal X-ray diffractometer for the precision measurement of intensity distribution of Bragg diffraction and Huang scattering

Cited by 21 publications

References 11 publications

Study of Biaxial Stress Induced by Cosputtered Thin Molybdenum Silicide Films in Silicon Single-Crystal Substrates

Study of Biaxial Stress Induced by Cosputtered Thin Molybdenum Silicide Films in Silicon Single-Crystal Substrates

Structure of Ce₂RhIn₈: an example of complementary use of high-resolution neutron powder diffraction and reciprocal-space mapping to study complex materials

X-ray diffraction

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A new automatic triple-crystal X-ray diffractometer for the precision measurement of intensity distribution of Bragg diffraction and Huang scattering

Cited by 21 publications

References 11 publications

Study of Biaxial Stress Induced by Cosputtered Thin Molybdenum Silicide Films in Silicon Single-Crystal Substrates

Study of Biaxial Stress Induced by Cosputtered Thin Molybdenum Silicide Films in Silicon Single-Crystal Substrates

Structure of Ce2RhIn8: an example of complementary use of high-resolution neutron powder diffraction and reciprocal-space mapping to study complex materials

X-ray diffraction

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Structure of Ce₂RhIn₈: an example of complementary use of high-resolution neutron powder diffraction and reciprocal-space mapping to study complex materials