A new approach to Hg1−XCdxTe: Syntheses, crystal and band structures, and optical properties

Zou, Jian‐Ping; Wang, Mingsheng; Wu, Ke‐Jun; Li, Yan; Zhang, Zhang-Jin; Huang, Jin‐Shun

doi:10.1016/j.solidstatesciences.2007.08.004

Cited by 4 publications

(1 citation statement)

References 26 publications

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“…Using isovalent alloying, we sought to tune the band gap and the electronic properties of Cs 2 Hg 6 S 7 . For example, band gap of HgTe can be changed by Cd alloying. , Different compositions of Cs 2 Hg 6– x Cd x S 7 ( x = 0.25, 0.5, 0.75, 1.0, 1.35, 2.0, 3.0, and 4.0) were synthesized. In the samples with x < 1.0, mainly black needle crystals were obtained.…”

Section: Results and Discussionmentioning

confidence: 99%

Investigation of Semi-Insulating Cs₂Hg₆S₇ and Cs₂Hg_6-xCd_xS₇ Alloy for Hard Radiation Detection

Malliakas

Liu

et al. 2014

Crystal Growth & Design

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A new method is described to synthesize the semiconductor Cs 2 Hg 6 S 7 and its alloy with Cd. Using the assynthesized material, large single crystals have been grown by the Bridgman method under an improved set of crystal growth parameters. In addition, Cd alloying in the form of Cs 2 Hg 6−x Cd x S 7 (x = 0.25, 0.5, 0.75, etc.) as well as doping with In, Cl was investigated and the influence on the electronic properties was studied. Cd alloying increases the band gap of Cs 2 Hg 6 S 7 from 1.63 to 1.84 eV. Doping with In and Cl however creates electron carriers and changes p-type samples of Cs 2 Hg 6 S 7 into n type. A 30-fold increase in the resistivity of the single crystals from 2 × 10 6 to 0.65 × 10 8 Ω cm has been achieved. The carrier mobility-lifetime product of the Cs 2 Hg 6 S 7 crystals has been increased to 1.7 × 10 −3 cm 2 /V for electrons (μτ) e and 2.4 × 10 −3 cm 2 /V for holes (μτ) h (HgCl 2 doped). The measured (μτ) e value is comparable to the commercial CdZnTe crystal while the (μτ) h is 10 times higher. Detection of Ag X-ray radiation is demonstrated using the as-grown Cs 2 Hg 6 S 7 crystals.

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Section: Results and Discussionmentioning

confidence: 99%

Investigation of Semi-Insulating Cs₂Hg₆S₇ and Cs₂Hg_6-xCd_xS₇ Alloy for Hard Radiation Detection

Malliakas

Liu

et al. 2014

Crystal Growth & Design

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A New Class of Nanostructured Inorganic–Organic Hybrid Semiconductors Based on II–VI Binary Compounds

Zhang

2011

Progress in Inorganic Chemistry

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ChemInform Abstract: A New Approach to Hg_1‐xCd_xTe: Syntheses, Crystal and Band Structures, and Optical Properties.

Zou

Wang

et al. 2008

ChemInform

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A New Approach to Hg1-xCdxTe: Syntheses, Crystal and Band Structures, and Optical Properties. -The new compounds Hg 0.90 Cd 0.10 Te, Hg 0.32 Cd 0.68 Te, and Hg0.29Cd0.71Te are synthesized by solid state reactions of appropriate mixtures of Hg(CN)2, Cd, and Te (500-530°C, 120 h) and characterized by single crystal XRD, UV/VIS spectroscopy, and DFT electronic band structure calculations. The compounds crystallize in the space group F43m with Z = 4 and are direct semiconductors. The new synthetic approach has the advantage of low cost and facile operation. -(ZOU, J.-P.; WANG, M.-S.; WU, K.-J.; GUO*, G.-C.; LI, Y.; ZHANG, Z.-J.; HUANG, J.-S.; Solid State Sci. 10 (2008) 1, 69-73; State Key Lab. Struct. Chem., Fujian Inst. Res. Struct.

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A new approach to Hg1−XCdxTe: Syntheses, crystal and band structures, and optical properties

Cited by 4 publications

References 26 publications

Investigation of Semi-Insulating Cs₂Hg₆S₇ and Cs₂Hg_6-xCd_xS₇ Alloy for Hard Radiation Detection

Investigation of Semi-Insulating Cs₂Hg₆S₇ and Cs₂Hg_6-xCd_xS₇ Alloy for Hard Radiation Detection

A New Class of Nanostructured Inorganic–Organic Hybrid Semiconductors Based on II–VI Binary Compounds

ChemInform Abstract: A New Approach to Hg_1‐xCd_xTe: Syntheses, Crystal and Band Structures, and Optical Properties.

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A new approach to Hg1−XCdxTe: Syntheses, crystal and band structures, and optical properties

Cited by 4 publications

References 26 publications

Investigation of Semi-Insulating Cs2Hg6S7 and Cs2Hg6-xCdxS7 Alloy for Hard Radiation Detection

Investigation of Semi-Insulating Cs2Hg6S7 and Cs2Hg6-xCdxS7 Alloy for Hard Radiation Detection

A New Class of Nanostructured Inorganic–Organic Hybrid Semiconductors Based on II–VI Binary Compounds

ChemInform Abstract: A New Approach to Hg1‐xCdxTe: Syntheses, Crystal and Band Structures, and Optical Properties.

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Investigation of Semi-Insulating Cs₂Hg₆S₇ and Cs₂Hg_6-xCd_xS₇ Alloy for Hard Radiation Detection

Investigation of Semi-Insulating Cs₂Hg₆S₇ and Cs₂Hg_6-xCd_xS₇ Alloy for Hard Radiation Detection

ChemInform Abstract: A New Approach to Hg_1‐xCd_xTe: Syntheses, Crystal and Band Structures, and Optical Properties.