A new approach to free-standing GaN using β-Ga2O3 as a substrate

Kachel, Krzysztof; Korytov, Maxim; Gogova, D.; Galazka, Zbigniew; Albrecht, M.; Zwierz, Radoslaw; Siche, D.; Golka, S.; Kwasniewski, Albert; Schmidbauer, M.; Fornari, R.

doi:10.1039/c2ce25976a

Cited by 41 publications

(25 citation statements)

References 15 publications

(24 reference statements)

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“…One exception was the growth on β‐Ga 2 O 3 substrates. The layers quality was only slightly improved, but regularly a self‐lift off occurred . The figure reveals the influence of different seeds on the grown layer.…”

Section: Resultsmentioning

confidence: 97%

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Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy

Siche

Zwierz

Kachel

et al. 2017

Crystal Research and Technology

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Pseudo-Halide Vapour Phase Epitaxy (PHVPE) was utilized to grow thick carbon doped GaN layers to study their suitability as semi-insulating (SI) substrates. With in-situ waste gas analysis by FTIR spectroscopy, the carbon doping from the HCN precursor gas was indirectly controlled in a wide range up to 5 × 10 19 cm -3 . The grown layers were characterized by Scanning Electron Microscopy (SEM), Secondary Ion Mass Spectroscopy (SIMS), Photoluminescence (PL), Micro-Raman-Spectroscopy, Hall effect measurement, and High Resolution X-Ray Diffractometry (HRXRD). Similar to the impurity incorporation (O, Si, Mg and Zn), carbon distribution proved to be inhomogeneous, due to its increased incorporation on facets of so-called V-pits.

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Section: Resultsmentioning

confidence: 97%

“…As a follow up to the work presented in, the growth of single crystalline, carbon doped gallium nitride (GaN) layers from the gas phase was developed. The goal of this work was to prepare samples for the study of carbon behaviour in GaN and to achieve semi‐insulating (SI) material for power electronics.…”

Section: Introductionmentioning

confidence: 99%

Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy

Siche

Zwierz

Kachel

et al. 2017

Crystal Research and Technology

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“…Распределение частиц по размерам регистрировали методом динамического светорассеяния (ДСР) на приборе Malvern Zetasizer Nano при температуре 298 K. Рамановские спектры были измерены при комнатной температуре на спектрометре Horiba Jobin Yvon T64000 с использованием в качестве источника излучения второй гармоники Nd : YAG-лазера (λ = 532 нм), плотность возбуждения на поверхности образца не превышала P = 2 кВт/см 2 . [33,34]), который реагирует с оксидом галлия [35,36]:…”

Section: методика экспериментаunclassified

Формирование наностержней GaN в монодисперсных сферических мезопористых частицах кремнезема

Стовпяга¹,

Курдюков²,

Кириленко³

et al. 2020

Физика И Техника Полупроводников

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Gallium nitride nanorods with a 15- 40 nm diameter and a 50-150 nm length have been synthesized in monodisperse spherical mesoporous silica particles (MSMSP) by high-temperature annealing the Ga2O3 precursor in ammonia. The template material (a-SiO2) was selectively removed by etching the composite MSMSP/GaN particles in HF. The individual GaN nanorods were thus obtained. It is shown, that the size of GaN nanorods was much higher than the pore size of MSMSP (diameter ~3 nm, length ~10 nm). The possible mechanism of formation of GaN nanorods was proposed. Redistribution of material inside the composite particles MSMSP/GaN possibly occurred by surface diffusion of gaseous molecules in mesopores and by diffusion of Ga and N atoms in a-SiO2.

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“…The cracking of a GaN layer can be suppressed by growing a bulk GaN layer with a thickness of several millimeters, or by reducing the bonding energy between a substrate and a GaN layer. Different methods were proposed to reduce the bonding energy between a substrate and a GaN layer, including porous layers created by dry etching [4], wet etching [5], electrochemical etching [6] or GaN decomposition induced by a TiN mask [7]; epitaxial lateral overgrowth over dielectric masks [8][9][10][11], employing substrates with a cleavage plane parallel to the c-axis of GaN [12,13], and weakly bonded buffer layers [14,15]. All these methods either require using non-standard substrates [12,13] or special ex situ pre-growth processing of the substrate like etching, buffer layer deposition, dielectric or metal mask fabrication, or GaN template structure growth.…”

Section: Introductionmentioning

confidence: 99%

Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer

Voronenkov

Leonidov

Bochkareva

et al. 2019

J. Phys.: Conf. Ser.

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A free-standing bulk gallium nitride layer with a thickness of 365 µm and a diameter of 50 mm was obtained by hydride vapor phase epitaxy on a sapphire substrate with a carbon buffer layer. The carbon buffer layer was deposited by thermal decomposition of methane in situ in the same process with the growth of a bulk GaN layer. The bulk GaN layer grown on the carbon buffer layer self-separated from the sapphire substrate during the cooling after the growth. The dislocation density was 8 · 10 6 cm −2 . The (0002) X-Ray rocking curve full width at half maximum was 164 arcsec. arXiv:1902.04672v2 [physics.app-ph] 17 Apr 2019 V. Voronenkov et al 2019

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A new approach to free-standing GaN using β-Ga2O3 as a substrate

Cited by 41 publications

References 15 publications

Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy

Carbon doped GaN layers grown by Pseudo‐Halide Vapour Phase Epitaxy

Формирование наностержней GaN в монодисперсных сферических мезопористых частицах кремнезема

Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer

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