A new approach for designing compressors with a new hardware‐friendly mathematical method for multi‐input XOR gates

Abstract

This study presents a new scalable mathematical approach for designing compressors with any arbitrary number of inputs using multi-input threshold gates, behaving as exclusive-OR (XOR). This study relates the theoretical concept to hardware implementation. The methodology is exploited for 3:2, 7:3, and 15:4 compressors, and then implemented by using input capacitors (or resistors) and threshold detectors. The transistor-level realisation of 3:2 and 7:3 compressors is simulated by using Synopsys HSPICE and 32 nm Carbon Nanotube Field Effect Transistors technology. The proposed methodology benefits from the parallel operation of threshold detectors. Therefore, by increasing the number of inputs, the delay parameter does not increase dramatically. The layout views are also provided in order to be able to compare area for the 3:2 compressors with both capacitor and resistor networks.

High‐speed energy efficient process, voltage and temperature tolerant hybrid multi‐threshold 4:2 compressor design in CNFET technology

“…The CAD tool electric [37] and the library mocmos‐cn [38, 39] are utilised to create circuit layouts, which is an independent technology library, defining ‐based rules. Equation (24) [40] can compute the transistor width of CNFETs, where represents minimum width of the gate, and pitch indicates the distance between the centres of two adjacent CNTs. Figs.…”

“…To estimate the overhead occupied with input capacitor arrays in CTL circuits, the total width of CTL cells is calculated (23), as a reasonable approximate criterion of area competence [9] (Table 5). Transistor width of CNFETs can be calculated by (24) [40], where is the minimum width of the gate, and pitch is the distance between the centres of two adjacent CNTs. Further, Table 5 displays how much percentage of the area will be occupied by capacitors.…”

First principle approach towards logic design using hydrogen‐doped single‐strand DNA

“…The theoretical model of density functional theory (DFT) and non‐equilibrium Green's function (NEGF) dependent all‐carbon spin based basic logic gates were proposed using spin‐polarised current with zigzag graphene nanoribbon [17]. Mathematical model was proposed to design compressor circuit with multi‐input Ex‐OR gate [18]. Adenine‐thymine based bio‐molecular p‐i‐n FET was designed by electrical doping [19].…”