A new approach based on the MSEO model to determine the refractive index of multiple quantum wells, with the presence of an electric field perpendicular to the well layers as an aid to QWSC design

Computational modelling of the reflectivity of AlGaAs/GaAs and SiGe/Si quantum well solar cells

“…This can be done through the models documented in Refs. [2][3][4][5]. In all the individual alloy layers to make up the QWSC; the effects of molar concentration and operating temperature on the refractive index of these alloy layers can be determined using the equations and techniques established in Refs.…”

“…Having calculated the total electric field (E), the equations and techniques established in Ref. [5] are used to determine the effects of electric field on the parametric equation E d and hence on the refractive index of the layer. The effects of electric field on refractive index of the quantum well region can be determined and incorporated.…”

“…The model is based on the MSEO model [2] combined with the work on the refractive index of quantum wells [3][4][5] and Frensel's formula [6]. The model generates the reflectivity of a QWSC for a given concentration level, configuration, electric field and operating temperature.…”

“…In order to do this, the author puts forth a new approach to modelling the reflectivity of the QWSC. The model presented here is based on a theoretical model of the refractive index of the QWSC established elsewhere [2][3][4][5] combined with the Fresnel formula [6].…”

“…The MSEO model allows the calculation of the refractive index of a semiconductor layer. In the previous works [3][4][5] investigations into the three major areas essential to design and determining the QWSC's refractive index are performed. These major areas are:…”