A new and simple model for GaAs heterojunction FET gate characteristics

Chen, C.-H.; Baier, S.M.; Arch, D.K.; Shur, M. S.

doi:10.1109/16.2499

Cited by 77 publications

(50 citation statements)

References 13 publications

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“…17 Other modeling choices only account for a single metal/semiconductor barrier and do not allow useful . The temperature dependence of the zero field and zero bias Schottky barrier heights and ideality factor using the model described by Lv et al 16 comparisons to HEMT-type Schottky barriers.…”

Section: Resultsmentioning

confidence: 99%

Al_0.85Ga_0.15N/Al_0.70Ga_0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

Baca

Klein

Allerman

et al. 2017

ECS J. Solid State Sci. Technol.

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AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors that are promising candidates for RF and power applications. Long-channel Al x Ga 1-x N HEMTs with x = 0.7 in the channel have been built and evaluated across the −50 • C to +200 • C temperature range. These devices achieved room temperature drain current as high as 46 mA/mm and were absent of gate leakage until the gate diode forward bias turn-on at ∼2.8 V, with a modest −2.2 V threshold voltage. A very large I on /I off current ratio, of 8 × 10 9 was demonstrated. A near ideal subthreshold slope that is just 35% higher than the theoretical limit across the temperature range was characterized. The ohmic contact characteristics were rectifying from −50 • C to +50 • C and became nearly linear at temperatures above 100 • C. An activation energy of 0.55 eV dictates the temperature dependence of off-state leakage. AlGaN-channel high electron mobility transistors (HEMTs) are among a class of ultra wide-bandgap transistors (UWBG) that are promising candidates for power and RF applications.1-9 Their promise derives from the large critical electric field, which scales as a power law with the bandgap of the material, 10 e.g. E C ∼ E G 2.5 (the exact dependence is a topic of active research) and provides favorable power and RF figures of merit. Enhancement-mode HEMTs are required for power applications, while depletion-mode HEMTs are suitable for RF applications. Power electronics applications utilize GaN/AlGaN HEMTs with dielectric insulators as a means of achieving a large gate voltage swing for high current density and low on-resistance. The dielectric insulators also suppress gate leakage, but at the expense of substantial interface charge density and the potential for hot electrons inducing unwanted trapped charges in the dielectric. These latter effects make gates employing dielectric insulators unsuitable for RF applications with GaN/AlGaN HEMTs.Al y Ga 1-y N/Al x Ga 1-x N HEMTs with high Al in the channel, x = 0.7 and larger, have promising figures of merit and are candidates for next generation power and RF applications. 1,7,11,12 With a bandgap of >5.8 eV, the Al 0.85 Ga 0.15 N barrier is practically an insulator, but since it is combined with a modest conduction band offset to the Al x Ga 1-x N channel it has both insulator and Schottky-like properties. As a crystallographic insulator-like material, it has potential for a very good interface with nearly lattice matched Al x Ga 1-x N channel adjacent to the 2-dimensional electron gas (2DEG). Even as a Schottky barrier it can have a large turn-on voltage to enhance the voltage swing and current drive capability. Although promising, Al x Ga 1-x N channel HEMTs lack maturity and do not yet match the high current density of AlGaN/GaN HEMTs due both to the difficulty of achieving good ohmic contacts and the lack of aggressive dimensional scaling to compensate for limitations of the low-field electron mobility, which is limited by alloy scattering.In this work ...

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Section: Resultsmentioning

confidence: 99%

Al_0.85Ga_0.15N/Al_0.70Ga_0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

Baca

Klein

Allerman

et al. 2017

ECS J. Solid State Sci. Technol.

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“…In this study, we adopted the model, which was used for GaAs Heterojunction MODFET and HIGFET characteristics by Chen et al [20], for Schottky contacts on AlInN/AlN/GaN SC and AlInN/AlN/GaN/AlN/ GaN DC heterostructures. The energy band diagram for Schottky contacts on AlInN/AlN/GaN SC and AlInN/AlN/GaN/AlN/GaN DC heterostructures at zero applied voltage (in equilibrium) is shown in Fig.…”

Section: The Modelmentioning

confidence: 99%

“…Several investigations have been reported to analyze the dominant current-transport mechanism in GaN-based Schottky diodes. Tunneling current and thermionic field emission are both considered as dominant current transport mechanisms [8][9][10][11][12][13][14][15][16][17][18][19][20]. Evstropov et al [8,10] and Balyaev et al [13] showed that the current flow in the III-V heterojunctions is generally governed by multistep tunneling with the involvement of dislocations even at room temperature.…”

Section: Introductionmentioning

confidence: 99%

“…A model of tunneling through a space charge region along a dislocation line (tube) is suggested [8,10,[13][14][15]. The unrealistically Thin Solid Films 548 (2013) 411-418 large ideality factors obtained from the current-voltage (I-V) characteristics over a wide range of forward bias for LEDs were explained by tunneling current mechanisms [16][17][18][19][20].…”

Section: Introductionmentioning

confidence: 99%

“…Chen et al [20] used a simple model to describe the gate current-voltage characteristics of the modulation-doped field effect transistor (MODFET's) and heterostructure insulated-gate field-effect transistors (HIGFET). Their model consists of two Schottky diodes in series: one is a metal-semiconductor (AlGaAs) Schottky diode and the other is an equivalent Schottky diode due to the heterojunction between the AlGaAs and GaAs [20].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures

et al. 2013

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Current-transport mechanisms were investigated in Schottky contacts on AlInN/AlN/GaN single channel (SC) and AlInN/AlN/GaN/AlN/GaN double channel (DC) heterostructures. A simple model was adapted to the current-transport mechanisms in DC heterostructure. In this model, two Schottky diodes are in series: one is a metal-semiconductor barrier layer (AIInN) Schottky diode and the other is an equivalent Schottky diode, which is due to the heterojunction between the AlN and GaN layer. Capacitance-voltage studies show the formation of a two-dimensional electron gas at the AlN/GaN interface in the SC and the first AlN/GaN interface from the substrate direction in the DC. In order to determine the current mechanisms for SC and DC heterostructures, we fit the analytical expressions given for the tunneling current to the experimental current-voltage data over a wide range of applied biases as well as at different temperatures. We observed a weak temperature dependence of the saturation current and a fairly small dependence on the temperature of the tunneling parameters in this temperature range. At both a low and medium forward-bias voltage values for Schottky contacts on AlInN/ AlN/GaN/AlN/GaN DC and AlInN/AlN/GaN SC heterostructures, the data are consistent with electron tunneling to deep levels in the vicinity of mixed/screw dislocations in the temperature range of 80-420 K.

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Physical models for heterostructure FET simulation

Lugli

Neviani

Saraniti

1990

Trans Emerging Tel Tech

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Field effect transistors (FET) based on heterostructures between III‐V binary and ternary compounds have been demonstrated as outstanding semiconductor devices for microwave applications. This paper will present a critical discussion of the physical models that are used to study the prototype of heterostructure devices, that is the High Electron Mobility Transistor (HEMT). The main technological features involved in the fabrication of HEMT are outlined and their incorporation into theoretical models discussed.

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A new and simple model for GaAs heterojunction FET gate characteristics

Cited by 77 publications

References 13 publications

Al_0.85Ga_0.15N/Al_0.70Ga_0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

Al_0.85Ga_0.15N/Al_0.70Ga_0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures

Physical models for heterostructure FET simulation

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A new and simple model for GaAs heterojunction FET gate characteristics

Cited by 77 publications

References 13 publications

Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

Current-Transport Mechanisms in the AlInN/AlN/GaN single-channel and AlInN/AlN/GaN/AlN/GaN double-channel heterostructures

Physical models for heterostructure FET simulation

Contact Info

Product

Resources

About

Al_0.85Ga_0.15N/Al_0.70Ga_0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature

Al_0.85Ga_0.15N/Al_0.70Ga_0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature