A neutron irradiation-induced displacement damage of indium vacancies in α-In₂Se₃ nanoflakes

Abstract

<p>The discovery of layered two-dimensional (2D) ferroelectric materials has promoted the development of miniaturized and highly integrated ferroelectric electronics.</p>

Controllable Polarization and Doping in Ferroelectric In2Se3 Monolayers and Heterobilayers via Intrinsic Defect Engineering

“…Very recently, the surface In or Se vacancies have been introduced in the In 2 Se 3 nanoflakes by the neutron irradiation and 60 Co γ-rays, respectively, which intricately tuned the electronic structure and polarization. 28,29 Compared with the abounding studies on defect-regulated electronic and magnetic properties, the defective effect in 2D ferroelectric materials and the formed heterostructures is rarely investigated. Therefore, these open questions greatly limit the practical applications of 2D ferroelectric In 2 Se 3 , especially in high-energy p−n junctions.…”

“…The localized electronic states are introduced by the single transition metal or chalcogen vacancy in transition metal dichalcogenides (TMDCs), leading to the reduced band gaps, low mobility, and p- or n-type doped conditions. , Along with the defect-tuned electronic properties, the I vacancies in the CrI 3 monolayer not only can modulate the 2D magnetism but also can induce the switchable electric polarization in the nanostructure. , For the In 2 Se 3 monolayer and its heterostructure, the doping conditions and electric dipole are very sensitive to the changes of electronic states and charge distribution, both of which are expected to be significantly regulated by the point defects. Very recently, the surface In or Se vacancies have been introduced in the In 2 Se 3 nanoflakes by the neutron irradiation and 60 Co γ-rays, respectively, which intricately tuned the electronic structure and polarization. , Compared with the abounding studies on defect-regulated electronic and magnetic properties, the defective effect in 2D ferroelectric materials and the formed heterostructures is rarely investigated. Therefore, these open questions greatly limit the practical applications of 2D ferroelectric In 2 Se 3 , especially in high-energy p–n junctions.…”

Control of photocurrent and multi-state memory by polar order engineering in 2H-stacked α-In2Se3 ferroelectric

“…The Raman spectrum of the sample (~57 nm) shows four typical peaks at ~88, 105, 179 and 194 cm −1 (Fig. 1b), which can be assigned to the E g , A 1 (LO + TO) (LO is longitudinal optical phonon, and TO is transverse optical phonon), A 1 (TO) and A 1 (LO) phonon modes of 2H α-In 2 Se 3 , respectively [17,28,29]. The 2H α-In 2 Se 3 flakes have the same Raman peaks except for the A 1 (LO) phonon mode with increasing thickness.…”

Tunable Single-Atom Catalysis of CO Oxidation on a Transition Metal-Anchored Defective In2Se3 Monolayer

“…In this work, based on the experimentally available 2D ferroelectrics, the In 2 Se 3 monolayer with out-of-plane polarization is chosen as the potential substrate for single-atom catalysis. For practical applications, the point defect, which comes from the material production process, is ineluctable for 2D materials , and often plays a positive role in anchoring metal atoms and improving catalytic performance. , Recently, the surface In or Se vacancies have been introduced in the In 2 Se 3 nanoflakes by neutron irradiation and 60 Co γ-rays, respectively. , Here, we theoretically investigate the potential of various single transition metal atoms (TM = Fe, Co, Ni, Cu, Zn, Mo, Ru, Rh, Pd, Ag, Ir, Pt, Au) on the defective In 2 Se 3 monolayer with Se vacancy as the ferroelectric SACs toward CO oxidation. The calculated results screened out seven catalysts with singly dispersed TM atoms anchored on the 2D defective In 2 Se 3 monolayer.…”