A neutron detector using silicon PIN photodiodes for personal neutron dosimetry

Aoyama, T.; Oka, Yasushi; Honda, K.; Mori, Chisato

doi:10.1016/0168-9002(92)90253-z

Cited by 32 publications

(9 citation statements)

References 7 publications

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“…Hence, there is no clear advantage over 10 B-or LiF-coated devices. Many groups have reported on Gd-coated devices [10][11][12][13][14]. The fundamental difficulty with Gd-coated devices arises from mixed radiation field measurements where background gamma ray contamination complicates the spectrum.…”

Section: Gd-based Coatingsmentioning

confidence: 99%

Recent results from thin-film-coated semiconductor neutron detectors

McGregor

Klann

Sanders

et al. 2003

X-Ray and Gamma-Ray Detectors and Applications IV

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Semiconductor based thermal neutron detectors provide a compact technology for neutron detection and imaging. Such devices can be produced by externally coating semiconductor charged particle detectors with neutron reactive films that convert free neutrons into charged-particle reaction products. Commonly used films for such devices utilize the 10 B(n,a) 7 Li reaction or the 6 Li(n,a) 3 H reaction, which are attractive due to the relatively high energies imparted to the reaction products. Unfortunately, thin film or "foil" type thermal neutron detectors suffer from self-absorption effects that ultimately limit neutron detection efficiency. Design considerations that maximize the efficiency and performance of such devices are discussed. Linear arrays fabricated from thin-film-coated pixel detectors are presented with results.

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Section: Gd-based Coatingsmentioning

confidence: 99%

Recent results from thin-film-coated semiconductor neutron detectors

McGregor

Klann

Sanders

et al. 2003

X-Ray and Gamma-Ray Detectors and Applications IV

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show abstract

“…Despite the above limitations, optimization of these planar designs, especially towards specific applications [7,[186][187][188][189][190][191][192][193][194][195][196][197][198][199], included the use of alternative conversion isotopes or com-plexes thereof [177,[200][201][202][203][204][205][206][207][208][209][210][211][212][213][214], large-bandgap and various resistivity semiconductors [30,45,190,200,[215][216][217][218][219][220][221][222][223], gamma-ray subtraction/discrimination [224][225][226][227]…”

Section: Indirect-conversion Heterostructuresmentioning

confidence: 99%

The physics of solid-state neutron detector materials and geometries

Caruso

2010

J. Phys.: Condens. Matter

121

111

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Detection of neutrons, at high total efficiency, with greater resolution in kinetic energy, time and/or real-space position, is fundamental to the advance of subfields within nuclear medicine, high-energy physics, non-proliferation of special nuclear materials, astrophysics, structural biology and chemistry, magnetism and nuclear energy. Clever indirect-conversion geometries, interaction/transport calculations and modern processing methods for silicon and gallium arsenide allow for the realization of moderate- to high-efficiency neutron detectors as a result of low defect concentrations, tuned reaction product ranges, enhanced effective omnidirectional cross sections and reduced electron-hole pair recombination from more physically abrupt and electronically engineered interfaces. Conversely, semiconductors with high neutron cross sections and unique transduction mechanisms capable of achieving very high total efficiency are gaining greater recognition despite the relative immaturity of their growth, lithographic processing and electronic structure understanding. This review focuses on advances and challenges in charged-particle-based device geometries, materials and associated mechanisms for direct and indirect transduction of thermal to fast neutrons within the context of application. Calorimetry- and radioluminescence-based intermediate processes in the solid state are not included.

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“…The efficiency achieved by using 10 B and 6 Li as a thin-layer coating in semiconductor detectors is normally between 5 and 10 %. Early research has shown a thermal neutron detection efficiency as high as 21.5 % for the 25 mm Gd foil converter (2) . This is mainly due to the high thermal neutron capture cross section of Gd, i.e.…”

Section: Introductionmentioning

confidence: 99%

“…The main ionising quantum to produce signal after Gd neutron capture are those internal conversion (IC) electrons emitted in the range of 29 -182 keV. While it has been proved to be effectively detectable in semiconductor devices, for example, in an Si PIN diode (2) , the low-energy electrons' signal falls in the range of background signal induced by various internal and external gamma rays.…”

Section: Introductionmentioning

confidence: 99%

Gamma-ray rejection, or detection, with gadolinium as a converter

Kandlakunta¹,

Cao²

2012

Radiation Protection Dosimetry

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Gadolinium is a competent neutron conversion material for neutron detection due to its extremely high neutron capture cross section. It differs from the other neutron reactive materials by emitting large amounts of low-energy electrons for the consequent signal generation in a detector. Such low-energy electrons, though abundant, are prone to be contaminated by internal and/or external gamma rays, such as the activated 43.0 keV K-X rays, given the high atomic number of gadolinium. While the 43.0 keV K-X ray ought to be rejected as it originates in part from the external gamma rays when neutron detection is concerned, the ability to separate this energy line from other signals points to a practical mode of gamma-ray detection by a thin-film semiconductor with gadolinium as a converter. In this paper, a gamma-ray discrimination scheme for neutron detection is studied, which also provides insight into gamma-ray detection with a small semiconductor device with gadolinium as a converter, in line with the same principle of isolating the K-X rays activated by high- or medium-energy gamma rays.

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A neutron detector using silicon PIN photodiodes for personal neutron dosimetry

Cited by 32 publications

References 7 publications

Recent results from thin-film-coated semiconductor neutron detectors

Recent results from thin-film-coated semiconductor neutron detectors

The physics of solid-state neutron detector materials and geometries

Gamma-ray rejection, or detection, with gadolinium as a converter

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