A nanoscale shape memory oxide

Zhang, Jinxing; Ke, Xiaoxing; Gou, Gaoyang; Seidel, Jan; Xiang, Bin; Yu, Pu; Liang, Wen I.; Minor, Andrew M.; Chu, Ying Hao; Tendeloo, Gustaaf Van; Ren, Xiaobing; Ramesh, R.

doi:10.1038/ncomms3768

Cited by 98 publications

(77 citation statements)

References 61 publications

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“…In conclusion, we have taken spin-and symmetry-polarized tunnelling across MgO as a canonical example of the need to take into account the electronic structure of defect sites in oxide semiconductors for advanced applications [62][63][64] . We have provided and highlighted an explicit description of thermally activated defect-assisted magnetotransport by utilizing solid-state tunnelling spectroscopy 55 to probe the ground and excited states of oxygen vacancies 49,52 .…”

Section: Discussionmentioning

confidence: 99%

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

et al. 2014

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Research on advanced materials such as multiferroic perovskites underscores promising applications, yet studies on these materials rarely address the impact of defects on the nominally expected materials property. Here, we revisit the comparatively simple oxide MgO as the model material system for spin-polarized solid-state tunnelling studies. We present a defect-mediated tunnelling potential landscape of localized states owing to explicitly identified defect species, against which we examine the bias and temperature dependence of magnetotransport. By mixing symmetry-resolved transport channels, a localized state may alter the effective barrier height for symmetry-resolved charge carriers, such that tunnelling magnetoresistance decreases most with increasing temperature when that state is addressed electrically. Thermal excitation promotes an occupancy switchover from the ground to the excited state of a defect, which impacts these magnetotransport characteristics. We thus resolve contradictions between experiment and theory in this otherwise canonical spintronics system, and propose a new perspective on defects in dielectrics.

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Section: Discussionmentioning

confidence: 99%

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

et al. 2014

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“…focused X-ray methods 400,401 ), and chemical sensitivity (e.g. Raman or secondary ion mass-spectrometry 299,402,403 ). These combinations can provide direct insight into physical and chemical phenomena induced by SPM tip locally.…”

Section: Discussionmentioning

confidence: 99%

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Vasudevan

Balke

Maksymovych

et al. 2017

Applied Physics Reviews

264

206

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Ferroelectric materials have remained one of the foci of condensed matter physics and materials science for over 50 years. In the last 20 years, the development of voltage-modulated scanning probe microscopy techniques, exemplified by Piezoresponse force microscopy (PFM) and associated time-and voltage spectroscopies, opened a pathway to explore these materials on a single-digit nanometer level. Consequently, domain structures, walls and polarization dynamics can now be imaged in real space. More generally, PFM has allowed studying electromechanical coupling in a broad variety of materials ranging from ionics to biological systems. It can also be anticipated that the recent Nobel prize 1 in molecular electromechanical machines will result in rapid growth in interest in PFM as a method to probe their behavior on single device and device assembly levels. However, the broad introduction of PFM also resulted in a growing number of reports on nearly-ubiquitous presence of ferroelectric-like phenomena including remnant polar states and electromechanical hysteresis loops in materials which are non-ferroelectric in the bulk, or in cases where size effects are expected to suppress ferroelectricity. While in certain cases plausible physical mechanisms can be suggested, there is remarkable similarity in observed behaviors, irrespective of the materials system. In this review, we summarize the basic principles of PFM, briefly discuss the features of ferroelectric surfaces salient to PFM imaging and spectroscopy, and summarize existing reports on ferroelectric-like responses in non-classical ferroelectric materials. We further discuss possible mechanisms behind observed behaviors, and possible experimental strategies for their identification.3

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“…Another approach to remove substrate clamping is the creation of nanostructure. [10][11][12] As an increase on the aspect ratio of nanostructure, the contact area of film and substrate is decreased. Thus, more volume fraction of film is free to move and the clamping effect is reduced.…”

Section: Introductionmentioning

confidence: 99%

Van der Waals oxide heteroepitaxy

Chu

2017

npj Quant Mater

Self Cite

141

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The research field of oxide heteroepitaxy suffers from the characteristics of misfit strain and substrate clamping, hampering the optimization of performance and the gain of fundamental understanding of oxide systems. Recently, there are demonstrations on functional oxides epitaxially fabricated on layered muscovite substrate. In these heterostructures, due to the weak interaction between substrate and film, they show the lattice of films close to bulk with excellent strictive properties, suggesting that these critical problems can be potentially solved by van der Waals oxide heteroepitaxy. In addition, by exploiting the transparent and flexible features of muscovite, such a heteroepitaxy can deliver new material solutions to transparent soft technology. In this paper, the history, development, and current status of van der Waals oxide heteroepitaxy are addressed and discussed. In the end, new research directions in terms of fundamental study and practical application are proposed to highlight the importance of this research field.

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A nanoscale shape memory oxide

Cited by 98 publications

References 61 publications

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

Localized states in advanced dielectrics from the vantage of spin- and symmetry-polarized tunnelling across MgO

Ferroelectric or non-ferroelectric: Why so many materials exhibit “ferroelectricity” on the nanoscale

Van der Waals oxide heteroepitaxy

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