A Monte-Carlo simulation of the effect of surface morphology on the fracture of nanobeams

Alan, Tuncay; Zehnder, Alan T.

doi:10.1007/s10704-008-9184-8

Cited by 10 publications

(2 citation statements)

References 26 publications

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“…Alan and Zehnder later reviewed the resulting r f distributions and further investigated the effects of surface finish on r f using fracture mechanics-based Monte-Carlo simulations. 175 In the simulations, the surface topography of the beams was statistically characterized from AFM height data and then used to generate equivalent surface profiles with randomly distributed steps. Each of the steps had a "root" or stress singularity with a corresponding notch SIF per Eq.…”

Section: Bending Test Methodsmentioning

confidence: 99%

Fracture strength of micro- and nano-scale silicon components

DelRio

Cook

Boyce

2015

Applied Physics Reviews

103

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Silicon devices are ubiquitous in many micro- and nano-scale technological applications, most notably microelectronics and microelectromechanical systems (MEMS). Despite their widespread usage, however, issues related to uncertain mechanical reliability remain a major factor inhibiting the further advancement of device commercialization. In particular, reliability issues related to the fracture of MEMS components have become increasingly important given continued reductions in critical feature sizes coupled with recent escalations in both MEMS device actuation forces and harsh usage conditions. In this review, the fracture strength of micro- and nano-scale silicon components in the context of MEMS is considered. An overview of the crystal structure and elastic and fracture properties of both single-crystal silicon (SCS) and polycrystalline silicon (polysilicon) is presented. Experimental methods for the deposition of SCS and polysilicon films, fabrication of fracture-strength test components, and analysis of strength data are also summarized. SCS and polysilicon fracture strength results as a function of processing conditions, component size and geometry, and test temperature, environment, and loading rate are then surveyed and analyzed to form overarching processing-structure-property-performance relationships. Future studies are suggested to advance our current view of these relationships and their impacts on the manufacturing yield, device performance, and operational reliability of micro- and nano-scale silicon devices.

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Section: Bending Test Methodsmentioning

confidence: 99%

Fracture strength of micro- and nano-scale silicon components

DelRio

Cook

Boyce

2015

Applied Physics Reviews

103

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“…Mechanical properties of materials depend critically on process parameters and dimensional scales (higher strengths are expected for smaller sizes). [9][10][11] The nanoreactor is a multi-scale device with electron transparent windows that are 100 times thinner than the chamber ceilings. What are the maximum pressures which (2012) can be sustained by the thick chamber ceilings and ultra-thin windows during operation?…”

mentioning

confidence: 99%

Micro-fabricated channel with ultra-thin yet ultra-strong windows enables electron microscopy under 4-bar pressure

Alan

Yokosawa

Gaspar

et al. 2012

Applied Physics Letters

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Transmission electron microscopy (TEM) of (de-)hydrogenation reactions is crucial to characterize efficiency of hydrogen storage materials. The nanoreactor, a micromachined channel with 15-nm-thick windows, effectively confines the gas flow to an electron-transparent chamber during TEM of reactions. Realistic experiments require very high pressures to be sustained by the device. Nanomechanical bulge tests and simulations show that due to a very strong size effect, ultra-thin device components can reliably withstand tensile stresses as high as 19.5 GPa enabling high pressure operation. We use the device to characterize Pd particles under a 4-bar H 2 pressure within the ultra-high-vacuum of the TEM. The increasing demand in alternative, clean energy sources has attracted a considerable attention to hydrogen as energy carrier and nanostructured metal hydrides as potential hydrogen storage materials.

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Encyclopedia of Nanotechnology

2012

160

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SynonymsElectrostatic RF MEMS switches; Micromechanical switches; RF MEMS switches DefinitionCapacitive micro-electro-mechanical systems (MEMS) switches are a special type of micromachined switches that control radio frequency (RF) signal paths in microwave and millimeter-wave circuits through mechanical motion and contact. OverviewCapacitive and direct current (dc)-contact MEMS switches are among the most important micromachined devices for high-frequency applications due to their near-ideal RF performance. Dc-contact switches function similarly to conventional relays: micromachined beams or plates move under the influence of an appropriately applied force (e.g., electrostatic force) to open or close a metal-to-metal contact. While micromachined beams or plates are also utilized in capacitive switches, these switches rely on metal-to-dielectric contacts to implement their on and off states. Capacitive switches are particularly attractive for demanding high-frequency communications, electronic warfare, and radar systems due to their ultralow loss (< 0.1-0.2 dB up to 40 GHz), high isolation (>20-50 dB for frequencies beyond 10 GHz), very high linearity (>66 dBm third-order intercept point), and near-zero power consumption ($tens of nJ per switching cycle and zero quiescent power for electrostatically actuated switches). When compared to solid-state switches, capacitive switches are relatively slow devices with speeds ranging in the tens to hundreds of microseconds range. This speed is primarily limited by switch inertia and squeeze film damping. Their relatively large lateral dimensions of tens or hundreds of mm allow capacitive switches to handle several hundred mW of RF power. Long-term operation, however, can only be achieved if they are hermetically sealed in order to avoid contaminationand humidity-induced failure. Hermetically sealed capacitive switches have successfully switched over B. Bhushan (ed.), Encyclopedia of Nanotechnology, DOI 10.1007/978-90-481-9751-4, # Springer Science+Business Media B.V. 2012 100 billion cycles at room temperature and under low RF power conditions (20 dBm). Despite the aforementioned RF advantages, capacitive switches are currently not available commercially and are not widely utilized in defense or communication systems. This is primarily due to the facts that (1) high-yield manufacturing processes are not widely available yet and (2) their main failure modes such as dielectric charging, dc/RF gas discharge and metal creep and the physics behind them have not been adequately understood and addressed today. Figure 1 shows a typical capacitive MEMS switch [1]. This is a shunt switch configuration, and is the dominant capacitive switch configuration in the literature today. The signal travels down the center conductor, and if the switch closes, will return along the outside conductors. It is, however, possible to design geometries for series configurations. Their characteristics, nevertheless, are very similar to the ones found in shunt switches. Consequently, this entry focuses...

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A Monte-Carlo simulation of the effect of surface morphology on the fracture of nanobeams

Cited by 10 publications

References 26 publications

Fracture strength of micro- and nano-scale silicon components

Fracture strength of micro- and nano-scale silicon components

Micro-fabricated channel with ultra-thin yet ultra-strong windows enables electron microscopy under 4-bar pressure

Encyclopedia of Nanotechnology

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