A monolithic integration of robust, water-/oil-repellent layer onto multilayer encapsulation films for organic electronic devices

Kim, Shin Young; Kim, Bong Jun; Kim, Do Heung; Im, Sung Gap

doi:10.1039/c5ra10425d

Cited by 13 publications

(10 citation statements)

References 39 publications

(50 reference statements)

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“…[2][3][4] Since both processes are solvent-free, vapor-phase process, the deposition processes do not damage the organic electronic devices. [2][3][4] Since both processes are solvent-free, vapor-phase process, the deposition processes do not damage the organic electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Initiated Chemical Vapor Deposition of Polymer Films at High Process Temperature for the Fabrication of Organic/Inorganic Multilayer Thin Film Encapsulation

et al. 2017

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For the fabrication of thin film encapsulation (TFE), sequential deposition of organic and inorganic layers is inevitable. A single-chamber system of initiated chemical vapor deposition (iCVD) and atomic layer deposition (ALD) is reported previously. Here, the substrate temperature (T s ) of the iCVD is aligned with that of ALD to facilitate the transition of the deposition mode by removing delays caused by repeated heating/cooling of the substrate. While increasing the T s of iCVD from 40 to 90 C, the process pressure is optimized so that the properties of the organic film are unchanged from that deposited with 40 C. The T s alignment significantly reduced the time delay during transition of the deposition mode, and the fabrication of the TFE is expedited.

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Section: Introductionmentioning

confidence: 99%

Initiated Chemical Vapor Deposition of Polymer Films at High Process Temperature for the Fabrication of Organic/Inorganic Multilayer Thin Film Encapsulation

et al. 2017

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“…With a 3‐dyad TFE consisting of a 400 nm‐pHVDS and 100 nm‐SiO x ‐like layer, a WVTR of 10 −2 g m −2 day −1 was achieved. Im's team adopted ALD for the generation of an inorganic Al 2 O 3 barrier layer, which was coupled with organosiloxane iCVD polymers consisting of poly(2,4,6,8‐tetravinyl‐2,4,6,8‐tetramethylcylotetrasiloxane) (pV4D4) and pV3D3 to create high‐performance TFEs . The layers formed excellent organic/inorganic interfaces, and the fabricated TFEs acted as outstanding barriers.…”

Section: Icvd For Electronic Devicesmentioning

confidence: 99%

“…b) SEM and AFM images of the non‐coated polyester fabric surface (left), the slightly rough surface of p(V4D4‐L‐PFDA) coated fabric (middle), the rougher surface of the p(V4D4‐L‐PFDA) coated fabric (right) . c) A schematic diagram of the water/oil‐repellent multilayer TFE . a) reproduced with permission .…”

Section: Icvd For Surface Treatmentsmentioning

confidence: 99%

Section: Icvd For Surface Treatmentsmentioning

confidence: 99%

“…Given that a solar power system is typically installed in an outdoor environment, surface fouling, and contamination are critical problems to be addressed for solar cell applications. Kim et al developed a self‐cleaning encapsulation layer by monolithically depositing a water/oil‐repellent hydrophobic layer on a thin film encapsulation (TFE) layer . To achieve a hydrophobic surface, pV4D4 and pPFDMA were stacked onto the surface of the encapsulation layer.…”

Section: Icvd For Surface Treatmentsmentioning

confidence: 99%

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Initiated Chemical Vapor Deposition: A Versatile Tool for Various Device Applications

et al. 2017

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Advances in device technology have been accompanied by the development of new types of materials and device fabrication methods. Considering device design, initiated chemical vapor deposition (iCVD) inspires innovation as a platform technology that extends the application range of a material or device. iCVD serves as a versatile tool for surface modification using functional thin film. The building of polymeric thin films from vapor phase monomers is highly desirable for the surface modification of thermally sensitive substrates. The precise control of thin film thicknesses can be achieved using iCVD, creating a conformal coating on nano-, and microstructured substrates such as membranes and microfluidics. iCVD allows for the deposition of polymer thin films of high chemical functionality, and thus, substrate surfaces can be functionalized directly from the iCVD polymer film or can selectively gain functionality through chemical reactions between functional groups on the substrate and other reactive molecules. These beneficial aspects of iCVD can spur breakthroughs in device fabrication based on the deposition of robust and functional polymer thin films. This review describes significant implications of and recent progress made in iCVD-based technologies in three fields: electronic devices, surface engineering, and biomedical applications.

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Application of Cat‐CVDTechnologies

2019

Catalytic Chemical Vapor Deposition

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A monolithic integration of robust, water-/oil-repellent layer onto multilayer encapsulation films for organic electronic devices

Abstract: Robust, water-/oil-repellent layer is monolithically integrated onto thin film multilayer encapsulation for organic electronic devices.

Cited by 13 publications

References 39 publications

Initiated Chemical Vapor Deposition of Polymer Films at High Process Temperature for the Fabrication of Organic/Inorganic Multilayer Thin Film Encapsulation

Initiated Chemical Vapor Deposition of Polymer Films at High Process Temperature for the Fabrication of Organic/Inorganic Multilayer Thin Film Encapsulation

Initiated Chemical Vapor Deposition: A Versatile Tool for Various Device Applications

Application of Cat‐CVDTechnologies

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