A monolithic 60 GHz diode mixer and IF amplifier in compatible technology

Adelseck, B.; Colquhoun, A.; Dieudonne, J.-M.; Ebert, G.; Schmegner, K.E.; Schwab, W.; Selders, J.

doi:10.1109/22.44133

Cited by 24 publications

(1 citation statement)

References 8 publications

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“…Several V-band monolithic low-noise amplifiers (LNAs) using HEMT technology have been reported 1 ' 3 as well as a V-band diode mixer using a metal semiconductor field effect transistor compatible process. 4 The recent refinements of HEMT technology make it possible to achieve a high level of integration for MMW monolithic ICs, allowing a monolithic V-band downconverter to be developed using 0.2 jjim T gate (or mushroom gate, describing the shape of Schottky gate profile in the transistor) InGaAs/GaAs pseudomorphic HEMT technology. The downconverter components consist of two V-band rf LNAs, a singly balanced diode downconverting mixer, and a distributed intermediate frequency individual components were also fabricated on the same wafer and tested.…”

Section: Introductionmentioning

confidence: 99%

Monolithic V-band high-electron mobility transistor downconverter component development for satellite communication links

Wang¹,

Hwang²,

Shaw³

et al. 1993

Journal of Spacecraft and Rockets

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This paper presents the design and performance of a complete monolithic downconverter developed for satellite communication links using high electron mobility transistor technology. Individual components, including Vband amplifiers, a V-band mixer, and a 2-10 GHz intermediate frequency amplifier, were designed, fabricated, and tested. The monolithic downconverter demonstrated a measured conversion gain of 22 dB at 60 GHz rf frequency with a local oscillator drive of +10 mW at 54 GHz, which represents state-of-the-art performance for highly integrated monolithic millimeter-wave integrated circuits at this frequency.

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Section: Introductionmentioning

confidence: 99%

Monolithic V-band high-electron mobility transistor downconverter component development for satellite communication links

Wang¹,

Hwang²,

Shaw³

et al. 1993

Journal of Spacecraft and Rockets

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Diode multipliers for submillimeter‐wave InAlAs/InGaAs heterostructure monolithic integrated circuits

Kwon

Pavlidis

1991

Micro & Optical Tech Letters

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InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter‐wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer and a new proposed scheme of quantum‐confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.

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