Layered structures of group-VI transition-metal dichalcogenides (TMDs) MX 2 (M ¼ Mo, W; X ¼ Te, Se, S) [1,2] are of particular importance in both fundamental research and novel device design, because these compounds manifest a variety of quantum phenomena and combine technologically relevant and complementary physical properties, thus promising applications in optoelectronics, valleytronics, spintronics, energy storage, and energy harvesting. [1,3-7] The most studied compound among these group-VI TMDs, molybdenum disulfide or MoS 2 , exists as several polytypes. Even a single three-atoms-thick MX 2 sheet occurs in many different forms: semiconducting hexagonal 1H, metallic octahedral 1T, semimetallic monoclinic 1T 0 , and slightly distorted polymorphic forms of the latter (1T 00 and 1T 000[7]). Whereas the 1H phase is stable, the 1T phase is very unstable and undergoes Peierls transition to the metastable 1T 0 phase, which, together with 1T 00 and 1T 000 , embedded mainly in the 1H phase, [8] can be obtained via chemical exfoliation. Phase-controlled large-scale growth of μm-sized layered group-VI TMDs and synthesis of 1T 0-MoS 2 crystals of high purity have also been reported recently, [9] whereas from a theoretical perspective, a potassiumassisted chemical vapor deposition method for the phase-selective growth of 1T 0-MoS 2 monolayers and 1T 0 /2H heterophase bilayers has been proposed. [10] Nevertheless, despite these past efforts, 1T 0-MX 2 monolayers remain difficult to obtain experimentally, and therefore, measurements are usually performed on multilayers [11] and then, with the help of theoretical considerations and numerical calculations, extrapolated to the monolayer level. Meanwhile, structural phase transitions between different polytypes can be realized via diverse methods: alkali-metal intercalation, strain engineering, electron-beam and high-energy laser irradiation, argon plasma treatment, controlled chemical vapor deposition growth, [12-19] etc. In previous years, TMDs have attracted considerable research interest for their applications as solid lubricants, [20] catalytic materials, [21] and high-performance transistors, [3] whereas, nowadays, layered TMDs have become a focus of research primarily as strong photoluminescent materials [4,22] that could host nontrivial topological phases. [12,23-34] On the basis of the calculated Z 2 topological index, which characterizes time-reversal-invariant systems, [35] layered 1T 0 TMDs have been predicted to exhibit the quantum-spin Hall (QSH) effect, [36] and thus, construction of a field-effect transistor that would be based on the reversible topological phase transition [33] has been proposed. [23] In contrast, 1T 0 molybdenum ditelluride (MoTe 2) has quite recently been theoretically characterized as a Z 4-nontrivial higher order topological insulator. [26] Experimental verification of the QSH effect in 2D crystals of atomic-scale thickness is a challenging task, aimed at observation of phenomena that are considered characteristic for the